Abstract
Ternary silver-indium-sulfide samples were deposited on various substrates using the sulfurization of AgIn metal precursors. A new procedure for the deposition of AgInS2 samples is reported. The effect of the [Ag]/[In] molar ratio in metal precursors on the structural, morphological, and photoelectrochemical properties of the samples was examined. X-ray diffraction patterns of samples show that the films are in the polycrystalline AgInS 2 phase. The thickness and direct band gap of the films were in the ranges of 1.11.2 μm and 1.921.94 eV, respectively. The conduction type of all samples was n-type. The carrier concentration, mobility, and resistivity of samples were in the ranges of 1.5×10137.0×1013 cm-3, 2.614.8 cm2V-1s-1, and 2.6×1043.5×104 Ωcm, respectively. It was found that the samples with an [Ag]/[In] molar ratio of 0.89 in AgIn metal precursors had a maximum photo-enhancement current density of 2.43 mAcm -2 at an applied bias of 0.5 V vs. an Ag/AgCl electrode in contact with electrolyte containing 0.5 M K2SO4. The results show that high-quality AgInS2 films can be obtained using the sulfurization of AgIn metal precursors for photoelectrochemical (PEC) applications.
Original language | English |
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Pages (from-to) | 1859-1866 |
Number of pages | 8 |
Journal | Solar Energy Materials and Solar Cells |
Volume | 95 |
Issue number | 7 |
DOIs | |
State | Published - 07 2011 |
Keywords
- AgInS
- Optical property
- Photoelectrode
- Thin film