Photoelectrochemical study of AgInS2 thin films prepared using sulfurization of evaporated metal precursors

Bo Hong Liou; Jyun Ting Li; Han Jhong Lai; Kong Wei Cheng

doi:10.1109/ICCCENG.2010.5560379

Photoelectrochemical study of AgInS₂ thin films prepared using sulfurization of evaporated metal precursors

Bo Hong Liou^*
, Jyun Ting Li
, Han Jhong Lai
, Kong Wei Cheng

^*Corresponding author for this work

Department of Chemical and Materials Engineering

Chang Gung University

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

2 Scopus citations

Abstract

The AgInS₂ polycrystalline films were grown on glass substrates by using sulfurization of evaporated metal precursors. New procedures for the growth of AgInS₂ films are presented. The influences of [Ag]/[In] molar ratio in the precursor films on structural, optical, electrical performances of films have been investigated. The X-ray diffraction patterns of the samples demonstrate the presence of polycrystalline structures of AgInS ₂ phase in these films. The band gaps and carrier densities of these samples determined from transmittance spectra and electrochemical analysis are in the range of 1.92∼1.94 eV, and 3.2×10²⁰∼4. 0×10²⁰ cm^-3, respectively. The flat band potentials of these samples are located between -0.83 and -1.10 V versus normal hydrogen electrode with the Mott-Schottky measurements. The maximum photocurrent density of samples prepared in this study with external potential kept at +1.0 V (vs. Ag/AgCl electrode) was found to be 4.4 mA/cm² under the illumination with white light intensity kept at 100 mW/cm².

Original language	English
Title of host publication	ICCCE 2010 - 2010 International Conference on Chemistry and Chemical Engineering, Proceedings
Pages	133-136
Number of pages	4
DOIs	https://doi.org/10.1109/ICCCENG.2010.5560379
State	Published - 2010
Event	2010 International Conference on Environmental and Agriculture Engineering, ICEAE 2010 - Kyoto, Japan Duration: 01 08 2010 → 03 08 2010

Publication series

Name	ICCCE 2010 - 2010 International Conference on Chemistry and Chemical Engineering, Proceedings

Conference

Conference	2010 International Conference on Environmental and Agriculture Engineering, ICEAE 2010
Country/Territory	Japan
City	Kyoto
Period	01/08/10 → 03/08/10

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

SDG 7 Affordable and Clean Energy

Keywords

Photocatalys
Solar energy
Thin films

Access to Document

10.1109/ICCCENG.2010.5560379

Cite this

Liou, B. H., Li, J. T., Lai, H. J., & Cheng, K. W. (2010). Photoelectrochemical study of AgInS₂ thin films prepared using sulfurization of evaporated metal precursors. In ICCCE 2010 - 2010 International Conference on Chemistry and Chemical Engineering, Proceedings (pp. 133-136). Article 5560379 (ICCCE 2010 - 2010 International Conference on Chemistry and Chemical Engineering, Proceedings). https://doi.org/10.1109/ICCCENG.2010.5560379

Liou, Bo Hong ; Li, Jyun Ting ; Lai, Han Jhong et al. / Photoelectrochemical study of AgInS₂ thin films prepared using sulfurization of evaporated metal precursors. ICCCE 2010 - 2010 International Conference on Chemistry and Chemical Engineering, Proceedings. 2010. pp. 133-136 (ICCCE 2010 - 2010 International Conference on Chemistry and Chemical Engineering, Proceedings).

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title = "Photoelectrochemical study of AgInS2 thin films prepared using sulfurization of evaporated metal precursors",

abstract = "The AgInS2 polycrystalline films were grown on glass substrates by using sulfurization of evaporated metal precursors. New procedures for the growth of AgInS2 films are presented. The influences of [Ag]/[In] molar ratio in the precursor films on structural, optical, electrical performances of films have been investigated. The X-ray diffraction patterns of the samples demonstrate the presence of polycrystalline structures of AgInS 2 phase in these films. The band gaps and carrier densities of these samples determined from transmittance spectra and electrochemical analysis are in the range of 1.92∼1.94 eV, and 3.2{\texttimes}1020∼4. 0{\texttimes}1020 cm-3, respectively. The flat band potentials of these samples are located between -0.83 and -1.10 V versus normal hydrogen electrode with the Mott-Schottky measurements. The maximum photocurrent density of samples prepared in this study with external potential kept at +1.0 V (vs. Ag/AgCl electrode) was found to be 4.4 mA/cm2 under the illumination with white light intensity kept at 100 mW/cm2.",

keywords = "Photocatalys, Solar energy, Thin films",

author = "Liou, \{Bo Hong\} and Li, \{Jyun Ting\} and Lai, \{Han Jhong\} and Cheng, \{Kong Wei\}",

year = "2010",

doi = "10.1109/ICCCENG.2010.5560379",

language = "英语",

isbn = "9781424477647",

series = "ICCCE 2010 - 2010 International Conference on Chemistry and Chemical Engineering, Proceedings",

pages = "133--136",

booktitle = "ICCCE 2010 - 2010 International Conference on Chemistry and Chemical Engineering, Proceedings",

note = "2010 International Conference on Environmental and Agriculture Engineering, ICEAE 2010 ; Conference date: 01-08-2010 Through 03-08-2010",

}

Liou, BH, Li, JT, Lai, HJ & Cheng, KW 2010, Photoelectrochemical study of AgInS₂ thin films prepared using sulfurization of evaporated metal precursors. in ICCCE 2010 - 2010 International Conference on Chemistry and Chemical Engineering, Proceedings., 5560379, ICCCE 2010 - 2010 International Conference on Chemistry and Chemical Engineering, Proceedings, pp. 133-136, 2010 International Conference on Environmental and Agriculture Engineering, ICEAE 2010, Kyoto, Japan, 01/08/10. https://doi.org/10.1109/ICCCENG.2010.5560379

Photoelectrochemical study of AgInS₂ thin films prepared using sulfurization of evaporated metal precursors. / Liou, Bo Hong; Li, Jyun Ting; Lai, Han Jhong et al.
ICCCE 2010 - 2010 International Conference on Chemistry and Chemical Engineering, Proceedings. 2010. p. 133-136 5560379 (ICCCE 2010 - 2010 International Conference on Chemistry and Chemical Engineering, Proceedings).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Photoelectrochemical study of AgInS2 thin films prepared using sulfurization of evaporated metal precursors

AU - Liou, Bo Hong

AU - Li, Jyun Ting

AU - Lai, Han Jhong

AU - Cheng, Kong Wei

PY - 2010

Y1 - 2010

N2 - The AgInS2 polycrystalline films were grown on glass substrates by using sulfurization of evaporated metal precursors. New procedures for the growth of AgInS2 films are presented. The influences of [Ag]/[In] molar ratio in the precursor films on structural, optical, electrical performances of films have been investigated. The X-ray diffraction patterns of the samples demonstrate the presence of polycrystalline structures of AgInS 2 phase in these films. The band gaps and carrier densities of these samples determined from transmittance spectra and electrochemical analysis are in the range of 1.92∼1.94 eV, and 3.2×1020∼4. 0×1020 cm-3, respectively. The flat band potentials of these samples are located between -0.83 and -1.10 V versus normal hydrogen electrode with the Mott-Schottky measurements. The maximum photocurrent density of samples prepared in this study with external potential kept at +1.0 V (vs. Ag/AgCl electrode) was found to be 4.4 mA/cm2 under the illumination with white light intensity kept at 100 mW/cm2.

AB - The AgInS2 polycrystalline films were grown on glass substrates by using sulfurization of evaporated metal precursors. New procedures for the growth of AgInS2 films are presented. The influences of [Ag]/[In] molar ratio in the precursor films on structural, optical, electrical performances of films have been investigated. The X-ray diffraction patterns of the samples demonstrate the presence of polycrystalline structures of AgInS 2 phase in these films. The band gaps and carrier densities of these samples determined from transmittance spectra and electrochemical analysis are in the range of 1.92∼1.94 eV, and 3.2×1020∼4. 0×1020 cm-3, respectively. The flat band potentials of these samples are located between -0.83 and -1.10 V versus normal hydrogen electrode with the Mott-Schottky measurements. The maximum photocurrent density of samples prepared in this study with external potential kept at +1.0 V (vs. Ag/AgCl electrode) was found to be 4.4 mA/cm2 under the illumination with white light intensity kept at 100 mW/cm2.

KW - Photocatalys

KW - Solar energy

KW - Thin films

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U2 - 10.1109/ICCCENG.2010.5560379

DO - 10.1109/ICCCENG.2010.5560379

M3 - 会议稿件

AN - SCOPUS:77958498616

SN - 9781424477647

T3 - ICCCE 2010 - 2010 International Conference on Chemistry and Chemical Engineering, Proceedings

SP - 133

EP - 136

BT - ICCCE 2010 - 2010 International Conference on Chemistry and Chemical Engineering, Proceedings

T2 - 2010 International Conference on Environmental and Agriculture Engineering, ICEAE 2010

Y2 - 1 August 2010 through 3 August 2010

ER -

Liou BH, Li JT, Lai HJ, Cheng KW. Photoelectrochemical study of AgInS₂ thin films prepared using sulfurization of evaporated metal precursors. In ICCCE 2010 - 2010 International Conference on Chemistry and Chemical Engineering, Proceedings. 2010. p. 133-136. 5560379. (ICCCE 2010 - 2010 International Conference on Chemistry and Chemical Engineering, Proceedings). doi: 10.1109/ICCCENG.2010.5560379