Photoelectron spectroscopic investigation of InN and InN/GaN heterostructures

C. F. Shih; N. C. Chen; C. Y. Tseng

doi:10.1016/j.tsf.2008.01.016

Photoelectron spectroscopic investigation of InN and InN/GaN heterostructures

C. F. Shih^*, N. C. Chen, C. Y. Tseng

^*Corresponding author for this work

Graduate Institute of Electro-Optical Engineering

Research output: Contribution to journal › Journal Letter › peer-review

14 Scopus citations

Abstract

The surface band diagram of InN and band structure of the InN/GaN interface were studied using ultraviolet photoemissive yield spectroscopy and X-ray photoemission spectroscopy (XPS). The surface work function and the difference between the Fermi level and the conduction band minimum of InN were determined by ultraviolet photoemissive yield measurement. The band offsets and surface band bending were determined using XPS. Both spectra proposed downward band bending of the InN surface. Moreover, the Schottky barrier height (SBH) of the InN/GaN interface is determined (1.5 eV). Comparison of the measured SBH with our previous results by electrical measurement is discussed. The physical quantities derived in this work provide important information for use in future studies of InN and InN/GaN heterostructures.

Original language	English
Pages (from-to)	5016-5019
Number of pages	4
Journal	Thin Solid Films
Volume	516
Issue number	15
DOIs	https://doi.org/10.1016/j.tsf.2008.01.016
State	Published - 02 06 2008

Keywords

Indium nitride
Metal-organic chemical vapor deposition
Schottky barrier
X-ray photoelectron spectroscopy

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10.1016/j.tsf.2008.01.016

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title = "Photoelectron spectroscopic investigation of InN and InN/GaN heterostructures",

abstract = "The surface band diagram of InN and band structure of the InN/GaN interface were studied using ultraviolet photoemissive yield spectroscopy and X-ray photoemission spectroscopy (XPS). The surface work function and the difference between the Fermi level and the conduction band minimum of InN were determined by ultraviolet photoemissive yield measurement. The band offsets and surface band bending were determined using XPS. Both spectra proposed downward band bending of the InN surface. Moreover, the Schottky barrier height (SBH) of the InN/GaN interface is determined (1.5 eV). Comparison of the measured SBH with our previous results by electrical measurement is discussed. The physical quantities derived in this work provide important information for use in future studies of InN and InN/GaN heterostructures.",

keywords = "Indium nitride, Metal-organic chemical vapor deposition, Schottky barrier, X-ray photoelectron spectroscopy",

author = "Shih, {C. F.} and Chen, {N. C.} and Tseng, {C. Y.}",

year = "2008",

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TY - JOUR

T1 - Photoelectron spectroscopic investigation of InN and InN/GaN heterostructures

AU - Shih, C. F.

AU - Chen, N. C.

AU - Tseng, C. Y.

PY - 2008/6/2

Y1 - 2008/6/2

N2 - The surface band diagram of InN and band structure of the InN/GaN interface were studied using ultraviolet photoemissive yield spectroscopy and X-ray photoemission spectroscopy (XPS). The surface work function and the difference between the Fermi level and the conduction band minimum of InN were determined by ultraviolet photoemissive yield measurement. The band offsets and surface band bending were determined using XPS. Both spectra proposed downward band bending of the InN surface. Moreover, the Schottky barrier height (SBH) of the InN/GaN interface is determined (1.5 eV). Comparison of the measured SBH with our previous results by electrical measurement is discussed. The physical quantities derived in this work provide important information for use in future studies of InN and InN/GaN heterostructures.

AB - The surface band diagram of InN and band structure of the InN/GaN interface were studied using ultraviolet photoemissive yield spectroscopy and X-ray photoemission spectroscopy (XPS). The surface work function and the difference between the Fermi level and the conduction band minimum of InN were determined by ultraviolet photoemissive yield measurement. The band offsets and surface band bending were determined using XPS. Both spectra proposed downward band bending of the InN surface. Moreover, the Schottky barrier height (SBH) of the InN/GaN interface is determined (1.5 eV). Comparison of the measured SBH with our previous results by electrical measurement is discussed. The physical quantities derived in this work provide important information for use in future studies of InN and InN/GaN heterostructures.

KW - Indium nitride

KW - Metal-organic chemical vapor deposition

KW - Schottky barrier

KW - X-ray photoelectron spectroscopy

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U2 - 10.1016/j.tsf.2008.01.016

DO - 10.1016/j.tsf.2008.01.016

M3 - 快报

AN - SCOPUS:42649093163

SN - 0040-6090

VL - 516

SP - 5016

EP - 5019

JO - Thin Solid Films

JF - Thin Solid Films

IS - 15

ER -

Photoelectron spectroscopic investigation of InN and InN/GaN heterostructures

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Keywords

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