Photoluminescence of three phonon replicas of the bound exciton in undoped InGaP prepared by liquid phase epitaxy

G. C. Jiang; Y. Chang; L. B. Chang; Y. D. Juang; W. L. Lu; Luke S. Lu; K. H. Chang

doi:10.1063/1.360031

Photoluminescence of three phonon replicas of the bound exciton in undoped InGaP prepared by liquid phase epitaxy

G. C. Jiang^*
, Y. Chang
, L. B. Chang
, Y. D. Juang
, W. L. Lu
, Luke S. Lu
, K. H. Chang

^*Corresponding author for this work

Research output: Contribution to journal › Journal Article › peer-review

14 Scopus citations

Abstract

Photoluminescence and Raman spectroscopies are employed to study undoped InGaP layers grown on GaAs (100) substrates at 750 °C by liquid phase epitaxy. There are four peaks in the photoluminescence spectrum in the energy range between 1.55 and 2.25 eV. Besides a bound exciton recombination, three longitudinal optical phonon replicas with one superimposed donor-acceptor emission are identified based upon their dependences of emission energies on temperature and excitation intensity.

Original language	English
Pages (from-to)	2886-2888
Number of pages	3
Journal	Journal of Applied Physics
Volume	78
Issue number	4
DOIs	https://doi.org/10.1063/1.360031
State	Published - 1995
Externally published	Yes

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title = "Photoluminescence of three phonon replicas of the bound exciton in undoped InGaP prepared by liquid phase epitaxy",

abstract = "Photoluminescence and Raman spectroscopies are employed to study undoped InGaP layers grown on GaAs (100) substrates at 750 °C by liquid phase epitaxy. There are four peaks in the photoluminescence spectrum in the energy range between 1.55 and 2.25 eV. Besides a bound exciton recombination, three longitudinal optical phonon replicas with one superimposed donor-acceptor emission are identified based upon their dependences of emission energies on temperature and excitation intensity.",

author = "Jiang, \{G. C.\} and Y. Chang and Chang, \{L. B.\} and Juang, \{Y. D.\} and Lu, \{W. L.\} and Lu, \{Luke S.\} and Chang, \{K. H.\}",

year = "1995",

doi = "10.1063/1.360031",

language = "英语",

volume = "78",

pages = "2886--2888",

journal = "Journal of Applied Physics",

issn = "0021-8979",

publisher = "American Institute of Physics",

number = "4",

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TY - JOUR

T1 - Photoluminescence of three phonon replicas of the bound exciton in undoped InGaP prepared by liquid phase epitaxy

AU - Jiang, G. C.

AU - Chang, Y.

AU - Chang, L. B.

AU - Juang, Y. D.

AU - Lu, W. L.

AU - Lu, Luke S.

AU - Chang, K. H.

PY - 1995

Y1 - 1995

N2 - Photoluminescence and Raman spectroscopies are employed to study undoped InGaP layers grown on GaAs (100) substrates at 750 °C by liquid phase epitaxy. There are four peaks in the photoluminescence spectrum in the energy range between 1.55 and 2.25 eV. Besides a bound exciton recombination, three longitudinal optical phonon replicas with one superimposed donor-acceptor emission are identified based upon their dependences of emission energies on temperature and excitation intensity.

AB - Photoluminescence and Raman spectroscopies are employed to study undoped InGaP layers grown on GaAs (100) substrates at 750 °C by liquid phase epitaxy. There are four peaks in the photoluminescence spectrum in the energy range between 1.55 and 2.25 eV. Besides a bound exciton recombination, three longitudinal optical phonon replicas with one superimposed donor-acceptor emission are identified based upon their dependences of emission energies on temperature and excitation intensity.

UR - https://www.scopus.com/pages/publications/0029359717

U2 - 10.1063/1.360031

DO - 10.1063/1.360031

M3 - 文章

AN - SCOPUS:0029359717

SN - 0021-8979

VL - 78

SP - 2886

EP - 2888

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 4

ER -

Photoluminescence of three phonon replicas of the bound exciton in undoped InGaP prepared by liquid phase epitaxy

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