Photon-Recycling in Ultraviolet GaN-Based Photodiodes with Porous AlGaN Distributed Bragg Reflectors

Chia Jung Wu; Guan Jhong Wang; Chyuan Hauer Kao; Zhong Jie Yang; Hsiang Chen; Yung Sen Lin; Chia Feng Lin; Jung Han

doi:10.1021/acsanm.9b00973

Photon-Recycling in Ultraviolet GaN-Based Photodiodes with Porous AlGaN Distributed Bragg Reflectors

Chia Jung Wu, Guan Jhong Wang, Chyuan Hauer Kao, Zhong Jie Yang, Hsiang Chen, Yung Sen Lin, Chia Feng Lin^*, Jung Han

^*Corresponding author for this work

Department of Electronic Engineering

Research output: Contribution to journal › Journal Article › peer-review

14 Scopus citations

Abstract

GaN-based ultraviolet photodiode with porous distributed Bragg reflectors (DBR) structure was demonstrated. The n⁺-AlGaN:Si epitaxial layers with high refractive index had been etched as porous-AlGaN layers with low refractive index through an electrochemical etched process. The peak wavelength of the responsivity spectra was measured at 355 nm, which was matched to the high reflectance wavelength region of the porous reflector. High photocurrent and large UV/visible rejection ratio were measured in the GaN photodiode with the porous-AlGaN reflector due to the light recycling process in the resonance cavity structure.

Original language	English
Pages (from-to)	5044-5048
Number of pages	5
Journal	ACS Applied Nano Materials
Volume	2
Issue number	8
DOIs	https://doi.org/10.1021/acsanm.9b00973
State	Published - 23 08 2019

Bibliographical note

Publisher Copyright:
Copyright © 2019 American Chemical Society.

Keywords

distributed Bragg reflectors (DBR)
electrochemical etching process
photon-recycling
porous AlGaN
ultraviolet photodiode (UV-PD)

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10.1021/acsanm.9b00973

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title = "Photon-Recycling in Ultraviolet GaN-Based Photodiodes with Porous AlGaN Distributed Bragg Reflectors",

abstract = "GaN-based ultraviolet photodiode with porous distributed Bragg reflectors (DBR) structure was demonstrated. The n+-AlGaN:Si epitaxial layers with high refractive index had been etched as porous-AlGaN layers with low refractive index through an electrochemical etched process. The peak wavelength of the responsivity spectra was measured at 355 nm, which was matched to the high reflectance wavelength region of the porous reflector. High photocurrent and large UV/visible rejection ratio were measured in the GaN photodiode with the porous-AlGaN reflector due to the light recycling process in the resonance cavity structure.",

keywords = "distributed Bragg reflectors (DBR), electrochemical etching process, photon-recycling, porous AlGaN, ultraviolet photodiode (UV-PD)",

author = "Wu, {Chia Jung} and Wang, {Guan Jhong} and Kao, {Chyuan Hauer} and Yang, {Zhong Jie} and Hsiang Chen and Lin, {Yung Sen} and Lin, {Chia Feng} and Jung Han",

note = "Publisher Copyright: Copyright {\textcopyright} 2019 American Chemical Society.",

year = "2019",

month = aug,

day = "23",

doi = "10.1021/acsanm.9b00973",

language = "英语",

volume = "2",

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T1 - Photon-Recycling in Ultraviolet GaN-Based Photodiodes with Porous AlGaN Distributed Bragg Reflectors

AU - Wu, Chia Jung

AU - Wang, Guan Jhong

AU - Kao, Chyuan Hauer

AU - Yang, Zhong Jie

AU - Chen, Hsiang

AU - Lin, Yung Sen

AU - Lin, Chia Feng

AU - Han, Jung

PY - 2019/8/23

Y1 - 2019/8/23

N2 - GaN-based ultraviolet photodiode with porous distributed Bragg reflectors (DBR) structure was demonstrated. The n+-AlGaN:Si epitaxial layers with high refractive index had been etched as porous-AlGaN layers with low refractive index through an electrochemical etched process. The peak wavelength of the responsivity spectra was measured at 355 nm, which was matched to the high reflectance wavelength region of the porous reflector. High photocurrent and large UV/visible rejection ratio were measured in the GaN photodiode with the porous-AlGaN reflector due to the light recycling process in the resonance cavity structure.

AB - GaN-based ultraviolet photodiode with porous distributed Bragg reflectors (DBR) structure was demonstrated. The n+-AlGaN:Si epitaxial layers with high refractive index had been etched as porous-AlGaN layers with low refractive index through an electrochemical etched process. The peak wavelength of the responsivity spectra was measured at 355 nm, which was matched to the high reflectance wavelength region of the porous reflector. High photocurrent and large UV/visible rejection ratio were measured in the GaN photodiode with the porous-AlGaN reflector due to the light recycling process in the resonance cavity structure.

KW - distributed Bragg reflectors (DBR)

KW - electrochemical etching process

KW - photon-recycling

KW - porous AlGaN

KW - ultraviolet photodiode (UV-PD)

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U2 - 10.1021/acsanm.9b00973

DO - 10.1021/acsanm.9b00973

M3 - 文章

AN - SCOPUS:85076340257

SN - 2574-0970

VL - 2

SP - 5044

EP - 5048

JO - ACS Applied Nano Materials

JF - ACS Applied Nano Materials

IS - 8

ER -

Photon-Recycling in Ultraviolet GaN-Based Photodiodes with Porous AlGaN Distributed Bragg Reflectors

Abstract

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Keywords

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