Abstract
High-k ytterbium oxide (Yb 2 O 3 ) gate dielectrics were deposited on Si substrate by reactive sputtering. The structural features of these films after postdeposition annealing treatment were studied by X-ray diffraction and X-ray photoelectron spectroscopy. It is found that the Yb 2 O 3 gate dielectrics annealed at 700 °C exhibit a larger capacitance value, a lower frequency dispersion and a smaller hysteresis voltage in C-V curves compared with other annealing temperatures. They also show negligible charge trapping under high constant voltage stress. This phenomenon is mainly attributed to the decrease in the amorphous silica thickness.
Original language | English |
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Pages (from-to) | 4979-4982 |
Number of pages | 4 |
Journal | Applied Surface Science |
Volume | 255 |
Issue number | 9 |
DOIs | |
State | Published - 15 02 2009 |
Keywords
- Amorphous silica
- High-k Yb O
- Postdeposition annealing treatment