@inproceedings{a8e9825d6494439baec24c39117cc6ad,
title = "Physical and electrical characteristics of atomic layer deposited RuO 2 nanocrystals for nanoscale nonvolatile memory applications",
abstract = "The physical and electrical characteristics of atomic layer deposited kappa;RuO2 nanocrystals embedded in high-κ HfO 2/Al2O3 films in an n-Si/SiO 2/HfO2/RuO2/Al2O3/Pt memory structure have been investigated. A small size of <10 nm and high-density of ∼ 1.6*1012/cm2 for the RuO 2 nanocrystals have been observed by high-resolution transmission electron microscope (HRTEM). The RuO2 metal nanocrystals and all high-κ films have been confirmed by x-ray photoelectron spectroscopy (XPS). A large hysteresis memory window of ⇐=Vε 10.8 V at a gate voltage of Vg = ±10 V has been observed for RuO2 nanocrystal memory capacitors. A hysteresis memory window of ⇐=Vε2.4 V has also been observed under a small sweeping gate voltage of Vg = ±5 V, due to charge storage in the RuO2 metal nanocrystals. The RuO2 metal nanocrystal memory capacitors have a large breakdown voltage of -15V. A low charge loss of 15% is observed after 10 years of retention.",
author = "W. Banerjee and S. Maikap",
year = "2008",
doi = "10.1109/ICSICT.2008.4734700",
language = "英语",
isbn = "9781424421855",
series = "International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT",
pages = "951--954",
booktitle = "ICSICT 2008 - 2008 9th International Conference on Solid-State and Integrated-Circuit Technology Proceedings",
note = "2008 9th International Conference on Solid-State and Integrated-Circuit Technology, ICSICT 2008 ; Conference date: 20-10-2008 Through 23-10-2008",
}