Physical and electrical characteristics of atomic layer deposited RuO 2 nanocrystals for nanoscale nonvolatile memory applications

W. Banerjee; S. Maikap

doi:10.1109/ICSICT.2008.4734700

Physical and electrical characteristics of atomic layer deposited RuO ₂ nanocrystals for nanoscale nonvolatile memory applications

W. Banerjee^*
, S. Maikap

^*Corresponding author for this work

Department of Electronic Engineering

Chang Gung University

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

The physical and electrical characteristics of atomic layer deposited kappa;RuO₂ nanocrystals embedded in high-κ HfO ₂/Al₂O₃ films in an n-Si/SiO ₂/HfO₂/RuO₂/Al₂O₃/Pt memory structure have been investigated. A small size of <10 nm and high-density of ∼ 1.6*10¹²/cm² for the RuO ₂ nanocrystals have been observed by high-resolution transmission electron microscope (HRTEM). The RuO₂ metal nanocrystals and all high-κ films have been confirmed by x-ray photoelectron spectroscopy (XPS). A large hysteresis memory window of ⇐=Vε 10.8 V at a gate voltage of V_g = ±10 V has been observed for RuO₂ nanocrystal memory capacitors. A hysteresis memory window of ⇐=Vε2.4 V has also been observed under a small sweeping gate voltage of V_g = ±5 V, due to charge storage in the RuO₂ metal nanocrystals. The RuO₂ metal nanocrystal memory capacitors have a large breakdown voltage of -15V. A low charge loss of 15% is observed after 10 years of retention.

Original language	English
Title of host publication	ICSICT 2008 - 2008 9th International Conference on Solid-State and Integrated-Circuit Technology Proceedings
Pages	951-954
Number of pages	4
DOIs	https://doi.org/10.1109/ICSICT.2008.4734700
State	Published - 2008
Event	2008 9th International Conference on Solid-State and Integrated-Circuit Technology, ICSICT 2008 - Beijing, China Duration: 20 10 2008 → 23 10 2008

Publication series

Name	International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT

Conference

Conference	2008 9th International Conference on Solid-State and Integrated-Circuit Technology, ICSICT 2008
Country/Territory	China
City	Beijing
Period	20/10/08 → 23/10/08

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

SDG 7 Affordable and Clean Energy

Access to Document

10.1109/ICSICT.2008.4734700

Cite this

Banerjee, W., & Maikap, S. (2008). Physical and electrical characteristics of atomic layer deposited RuO ₂ nanocrystals for nanoscale nonvolatile memory applications. In ICSICT 2008 - 2008 9th International Conference on Solid-State and Integrated-Circuit Technology Proceedings (pp. 951-954). Article 4734700 (International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT). https://doi.org/10.1109/ICSICT.2008.4734700

Banerjee, W. ; Maikap, S. / Physical and electrical characteristics of atomic layer deposited RuO ₂ nanocrystals for nanoscale nonvolatile memory applications. ICSICT 2008 - 2008 9th International Conference on Solid-State and Integrated-Circuit Technology Proceedings. 2008. pp. 951-954 (International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT).

@inproceedings{a8e9825d6494439baec24c39117cc6ad,

title = "Physical and electrical characteristics of atomic layer deposited RuO 2 nanocrystals for nanoscale nonvolatile memory applications",

abstract = "The physical and electrical characteristics of atomic layer deposited kappa;RuO2 nanocrystals embedded in high-κ HfO 2/Al2O3 films in an n-Si/SiO 2/HfO2/RuO2/Al2O3/Pt memory structure have been investigated. A small size of <10 nm and high-density of ∼ 1.6*1012/cm2 for the RuO 2 nanocrystals have been observed by high-resolution transmission electron microscope (HRTEM). The RuO2 metal nanocrystals and all high-κ films have been confirmed by x-ray photoelectron spectroscopy (XPS). A large hysteresis memory window of ⇐=Vε 10.8 V at a gate voltage of Vg = ±10 V has been observed for RuO2 nanocrystal memory capacitors. A hysteresis memory window of ⇐=Vε2.4 V has also been observed under a small sweeping gate voltage of Vg = ±5 V, due to charge storage in the RuO2 metal nanocrystals. The RuO2 metal nanocrystal memory capacitors have a large breakdown voltage of -15V. A low charge loss of 15\% is observed after 10 years of retention.",

author = "W. Banerjee and S. Maikap",

year = "2008",

doi = "10.1109/ICSICT.2008.4734700",

language = "英语",

isbn = "9781424421855",

series = "International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT",

pages = "951--954",

booktitle = "ICSICT 2008 - 2008 9th International Conference on Solid-State and Integrated-Circuit Technology Proceedings",

note = "2008 9th International Conference on Solid-State and Integrated-Circuit Technology, ICSICT 2008 ; Conference date: 20-10-2008 Through 23-10-2008",

}

Banerjee, W & Maikap, S 2008, Physical and electrical characteristics of atomic layer deposited RuO ₂ nanocrystals for nanoscale nonvolatile memory applications. in ICSICT 2008 - 2008 9th International Conference on Solid-State and Integrated-Circuit Technology Proceedings., 4734700, International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT, pp. 951-954, 2008 9th International Conference on Solid-State and Integrated-Circuit Technology, ICSICT 2008, Beijing, China, 20/10/08. https://doi.org/10.1109/ICSICT.2008.4734700

Physical and electrical characteristics of atomic layer deposited RuO ₂ nanocrystals for nanoscale nonvolatile memory applications. / Banerjee, W.; Maikap, S.
ICSICT 2008 - 2008 9th International Conference on Solid-State and Integrated-Circuit Technology Proceedings. 2008. p. 951-954 4734700 (International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Physical and electrical characteristics of atomic layer deposited RuO 2 nanocrystals for nanoscale nonvolatile memory applications

AU - Banerjee, W.

AU - Maikap, S.

PY - 2008

Y1 - 2008

N2 - The physical and electrical characteristics of atomic layer deposited kappa;RuO2 nanocrystals embedded in high-κ HfO 2/Al2O3 films in an n-Si/SiO 2/HfO2/RuO2/Al2O3/Pt memory structure have been investigated. A small size of <10 nm and high-density of ∼ 1.6*1012/cm2 for the RuO 2 nanocrystals have been observed by high-resolution transmission electron microscope (HRTEM). The RuO2 metal nanocrystals and all high-κ films have been confirmed by x-ray photoelectron spectroscopy (XPS). A large hysteresis memory window of ⇐=Vε 10.8 V at a gate voltage of Vg = ±10 V has been observed for RuO2 nanocrystal memory capacitors. A hysteresis memory window of ⇐=Vε2.4 V has also been observed under a small sweeping gate voltage of Vg = ±5 V, due to charge storage in the RuO2 metal nanocrystals. The RuO2 metal nanocrystal memory capacitors have a large breakdown voltage of -15V. A low charge loss of 15% is observed after 10 years of retention.

AB - The physical and electrical characteristics of atomic layer deposited kappa;RuO2 nanocrystals embedded in high-κ HfO 2/Al2O3 films in an n-Si/SiO 2/HfO2/RuO2/Al2O3/Pt memory structure have been investigated. A small size of <10 nm and high-density of ∼ 1.6*1012/cm2 for the RuO 2 nanocrystals have been observed by high-resolution transmission electron microscope (HRTEM). The RuO2 metal nanocrystals and all high-κ films have been confirmed by x-ray photoelectron spectroscopy (XPS). A large hysteresis memory window of ⇐=Vε 10.8 V at a gate voltage of Vg = ±10 V has been observed for RuO2 nanocrystal memory capacitors. A hysteresis memory window of ⇐=Vε2.4 V has also been observed under a small sweeping gate voltage of Vg = ±5 V, due to charge storage in the RuO2 metal nanocrystals. The RuO2 metal nanocrystal memory capacitors have a large breakdown voltage of -15V. A low charge loss of 15% is observed after 10 years of retention.

UR - https://www.scopus.com/pages/publications/60649092386

U2 - 10.1109/ICSICT.2008.4734700

DO - 10.1109/ICSICT.2008.4734700

M3 - 会议稿件

AN - SCOPUS:60649092386

SN - 9781424421855

T3 - International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT

SP - 951

EP - 954

BT - ICSICT 2008 - 2008 9th International Conference on Solid-State and Integrated-Circuit Technology Proceedings

T2 - 2008 9th International Conference on Solid-State and Integrated-Circuit Technology, ICSICT 2008

Y2 - 20 October 2008 through 23 October 2008

ER -

Banerjee W, Maikap S. Physical and electrical characteristics of atomic layer deposited RuO ₂ nanocrystals for nanoscale nonvolatile memory applications. In ICSICT 2008 - 2008 9th International Conference on Solid-State and Integrated-Circuit Technology Proceedings. 2008. p. 951-954. 4734700. (International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT). doi: 10.1109/ICSICT.2008.4734700