Physical and electrical characteristics of atomic layer deposited RuO2 nanocrystals for nanoscale nonvolatile memory applications

Research output: Contribution to conference › Proceeding

Original language	American English
State	Published - 2008
Event	9th International Conference on Solid-State and Integrated-Circuit Technology (ICSICT) - Beijing, China Duration: 20 10 2008 → 23 10 2008

Conference	9th International Conference on Solid-State and Integrated-Circuit Technology (ICSICT)
Period	20/10/08 → 23/10/08

Cite this

@conference{e147e330e3ce4f9dada451a3945442a3,

title = "Physical and electrical characteristics of atomic layer deposited RuO2 nanocrystals for nanoscale nonvolatile memory applications",

author = "W. Banerjee and Siddheswar Maikap",

year = "2008",

language = "American English",

note = "9th International Conference on Solid-State and Integrated-Circuit Technology (ICSICT) ; Conference date: 20-10-2008 Through 23-10-2008",

}