Physical and electrical characteristics of the high-K Er2O 3 polyoxide deposited on polycrystalline silicon

Chyuan Haur Kao; Hsiang Chen; Jing Siang Chiu

doi:10.1149/1.3360649

Physical and electrical characteristics of the high-K Er₂O ₃ polyoxide deposited on polycrystalline silicon

Chyuan Haur Kao^*, Hsiang Chen, Jing Siang Chiu

^*Corresponding author for this work

Department of Electronic Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

In this study, the high-k Er₂O₃ gate dielectrics were deposited on polycrystalline silicon were fabricated for the first time. The as-deposited samples treated at different annealing temperatures were examined by applying different material and electrical analysis. All the electricalanalysis and structural investigation concluded that annealing temperature at 800^°C was the optimal condition that formed the well-crystallized Ta₂O₅ film. The high-k Er ₂O₃ dielectric will be promising for future generation of electronic device applications.

Original language	English
Title of host publication	China Semiconductor Technology International Conference 2010, CSTIC 2010
Publisher	Electrochemical Society Inc.
Pages	389-394
Number of pages	6
Edition	1
ISBN (Electronic)	9781607681564
ISBN (Print)	9781607682639
DOIs	https://doi.org/10.1149/1.3360649
State	Published - 2010
Event	China Semiconductor Technology International Conference 2010, CSTIC 2010 - Shanghai, China Duration: 18 03 2010 → 19 03 2010

Publication series

Name	ECS Transactions
Number	1
Volume	27
ISSN (Print)	1938-5862
ISSN (Electronic)	1938-6737

Conference

Conference	China Semiconductor Technology International Conference 2010, CSTIC 2010
Country/Territory	China
City	Shanghai
Period	18/03/10 → 19/03/10

Access to Document

10.1149/1.3360649

Cite this

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title = "Physical and electrical characteristics of the high-K Er2O 3 polyoxide deposited on polycrystalline silicon",

abstract = "In this study, the high-k Er2O3 gate dielectrics were deposited on polycrystalline silicon were fabricated for the first time. The as-deposited samples treated at different annealing temperatures were examined by applying different material and electrical analysis. All the electricalanalysis and structural investigation concluded that annealing temperature at 800°C was the optimal condition that formed the well-crystallized Ta2O5 film. The high-k Er 2O3 dielectric will be promising for future generation of electronic device applications.",

author = "Kao, \{Chyuan Haur\} and Hsiang Chen and Chiu, \{Jing Siang\}",

year = "2010",

doi = "10.1149/1.3360649",

language = "英语",

isbn = "9781607682639",

series = "ECS Transactions",

publisher = "Electrochemical Society Inc.",

number = "1",

pages = "389--394",

booktitle = "China Semiconductor Technology International Conference 2010, CSTIC 2010",

edition = "1",

note = "China Semiconductor Technology International Conference 2010, CSTIC 2010 ; Conference date: 18-03-2010 Through 19-03-2010",

}

Kao, CH, Chen, H & Chiu, JS 2010, Physical and electrical characteristics of the high-K Er₂O ₃ polyoxide deposited on polycrystalline silicon. in China Semiconductor Technology International Conference 2010, CSTIC 2010. 1 edn, ECS Transactions, no. 1, vol. 27, Electrochemical Society Inc., pp. 389-394, China Semiconductor Technology International Conference 2010, CSTIC 2010, Shanghai, China, 18/03/10. https://doi.org/10.1149/1.3360649

Physical and electrical characteristics of the high-K Er₂O ₃ polyoxide deposited on polycrystalline silicon. / Kao, Chyuan Haur; Chen, Hsiang; Chiu, Jing Siang.
China Semiconductor Technology International Conference 2010, CSTIC 2010. 1. ed. Electrochemical Society Inc., 2010. p. 389-394 (ECS Transactions; Vol. 27, No. 1).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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Y1 - 2010

N2 - In this study, the high-k Er2O3 gate dielectrics were deposited on polycrystalline silicon were fabricated for the first time. The as-deposited samples treated at different annealing temperatures were examined by applying different material and electrical analysis. All the electricalanalysis and structural investigation concluded that annealing temperature at 800°C was the optimal condition that formed the well-crystallized Ta2O5 film. The high-k Er 2O3 dielectric will be promising for future generation of electronic device applications.

AB - In this study, the high-k Er2O3 gate dielectrics were deposited on polycrystalline silicon were fabricated for the first time. The as-deposited samples treated at different annealing temperatures were examined by applying different material and electrical analysis. All the electricalanalysis and structural investigation concluded that annealing temperature at 800°C was the optimal condition that formed the well-crystallized Ta2O5 film. The high-k Er 2O3 dielectric will be promising for future generation of electronic device applications.

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