Abstract
Titanium-doped erbium oxide films on Si(100) have been investigated as an alternative gate dielectric. The dielectric films were characterized by X-ray photoelectron spectroscopy, atomic force microscopy, and electrical measurements. We found that the addition of Ti into Er2 O3 film after annealing at 700°C can reduce the SiOx formation at the interfacial layer and thus reduce the O diffusion during the film postthermal annealing process. Such suppression effect significantly improved the electrical properties of the dielectric films.
Original language | English |
---|---|
Pages (from-to) | G54-G57 |
Journal | Electrochemical and Solid-State Letters |
Volume | 10 |
Issue number | 8 |
DOIs | |
State | Published - 2007 |