Physical and electrical properties of Ti-doped Er2 O3 films for high-k gate dielectrics

Chuan Hsi Liu; Tung Ming Pan; Wei Hao Shu; Kuo Chan Huang

doi:10.1149/1.2742497

Physical and electrical properties of Ti-doped Er2 O3 films for high-k gate dielectrics

Chuan Hsi Liu^*
, Tung Ming Pan
, Wei Hao Shu
, Kuo Chan Huang

^*Corresponding author for this work

Department of Electronic Engineering

Ming Chuan University
Chang Gung University

Research output: Contribution to journal › Journal Article › peer-review

10 Scopus citations

Abstract

Titanium-doped erbium oxide films on Si(100) have been investigated as an alternative gate dielectric. The dielectric films were characterized by X-ray photoelectron spectroscopy, atomic force microscopy, and electrical measurements. We found that the addition of Ti into Er2 O3 film after annealing at 700°C can reduce the SiOx formation at the interfacial layer and thus reduce the O diffusion during the film postthermal annealing process. Such suppression effect significantly improved the electrical properties of the dielectric films.

Original language	English
Pages (from-to)	G54-G57
Journal	Electrochemical and Solid-State Letters
Volume	10
Issue number	8
DOIs	https://doi.org/10.1149/1.2742497
State	Published - 2007

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title = "Physical and electrical properties of Ti-doped Er2 O3 films for high-k gate dielectrics",

abstract = "Titanium-doped erbium oxide films on Si(100) have been investigated as an alternative gate dielectric. The dielectric films were characterized by X-ray photoelectron spectroscopy, atomic force microscopy, and electrical measurements. We found that the addition of Ti into Er2 O3 film after annealing at 700°C can reduce the SiOx formation at the interfacial layer and thus reduce the O diffusion during the film postthermal annealing process. Such suppression effect significantly improved the electrical properties of the dielectric films.",

author = "Liu, \{Chuan Hsi\} and Pan, \{Tung Ming\} and Shu, \{Wei Hao\} and Huang, \{Kuo Chan\}",

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AU - Liu, Chuan Hsi

AU - Pan, Tung Ming

AU - Shu, Wei Hao

AU - Huang, Kuo Chan

PY - 2007

Y1 - 2007

N2 - Titanium-doped erbium oxide films on Si(100) have been investigated as an alternative gate dielectric. The dielectric films were characterized by X-ray photoelectron spectroscopy, atomic force microscopy, and electrical measurements. We found that the addition of Ti into Er2 O3 film after annealing at 700°C can reduce the SiOx formation at the interfacial layer and thus reduce the O diffusion during the film postthermal annealing process. Such suppression effect significantly improved the electrical properties of the dielectric films.

AB - Titanium-doped erbium oxide films on Si(100) have been investigated as an alternative gate dielectric. The dielectric films were characterized by X-ray photoelectron spectroscopy, atomic force microscopy, and electrical measurements. We found that the addition of Ti into Er2 O3 film after annealing at 700°C can reduce the SiOx formation at the interfacial layer and thus reduce the O diffusion during the film postthermal annealing process. Such suppression effect significantly improved the electrical properties of the dielectric films.

UR - https://www.scopus.com/pages/publications/34250377358

U2 - 10.1149/1.2742497

DO - 10.1149/1.2742497

M3 - 文章

AN - SCOPUS:34250377358

SN - 1099-0062

VL - 10

SP - G54-G57

JO - Electrochemical and Solid-State Letters

JF - Electrochemical and Solid-State Letters

IS - 8

ER -

Physical and electrical properties of Ti-doped Er2 O3 films for high-k gate dielectrics

Abstract

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