Physical and electrical properties of ultrathin HfO2/HfSi xOy stacked gate dielectrics on compressively strained-Si0.74Ge0.26/Si heterolayers

S. Maikap; Je Hun Lee; Doh Y. Kim; R. Mahapatra; S. K. Ray; Jae Hoon Song; Y. S. No; Won Kook Choi

Physical and electrical properties of ultrathin HfO₂/HfSi _xO_y stacked gate dielectrics on compressively strained-Si_0.74Ge_0.26/Si heterolayers

S. Maikap^*
, Je Hun Lee
, Doh Y. Kim
, R. Mahapatra
, S. K. Ray
, Jae Hoon Song
, Y. S. No
, Won Kook Choi

^*Corresponding author for this work

Research output: Contribution to journal › Journal Article › peer-review

9 Scopus citations

Abstract

The physical and electrical properties of HfO₂/HfSi _xO_y stacked gate dielectrics with EOT of 2.8 nm deposited directly on Si heterolayer were investigated. The electrical properties in terms of capacitance-voltage, conductance-voltage, hysteresis, current density-electric field and shift in gate voltage under constant current stress were studied using a metal-oxide-semiconductor structure. Chemical analysis of the interfacial layer using SIMS and AES depth profile revealed that the interfacial layer is a silicate-like compound. Results show a lower charge trapping property under constant current stress for the HfO₂ along with interfacial layer.

Original language	English
Pages (from-to)	52-56
Number of pages	5
Journal	Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume	22
Issue number	1
State	Published - 01 2004
Externally published	Yes

Cite this

@article{f44a9468481c4a008160ccbd88a07996,

title = "Physical and electrical properties of ultrathin HfO2/HfSi xOy stacked gate dielectrics on compressively strained-Si0.74Ge0.26/Si heterolayers",

abstract = "The physical and electrical properties of HfO2/HfSi xOy stacked gate dielectrics with EOT of 2.8 nm deposited directly on Si heterolayer were investigated. The electrical properties in terms of capacitance-voltage, conductance-voltage, hysteresis, current density-electric field and shift in gate voltage under constant current stress were studied using a metal-oxide-semiconductor structure. Chemical analysis of the interfacial layer using SIMS and AES depth profile revealed that the interfacial layer is a silicate-like compound. Results show a lower charge trapping property under constant current stress for the HfO2 along with interfacial layer.",

author = "S. Maikap and Lee, \{Je Hun\} and Kim, \{Doh Y.\} and R. Mahapatra and Ray, \{S. K.\} and Song, \{Jae Hoon\} and No, \{Y. S.\} and Choi, \{Won Kook\}",

year = "2004",

month = jan,

language = "英语",

volume = "22",

pages = "52--56",

journal = "Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures",

issn = "1071-1023",

publisher = "AVS Science and Technology Society",

number = "1",

}

Physical and electrical properties of ultrathin HfO₂/HfSi _xO_y stacked gate dielectrics on compressively strained-Si_0.74Ge_0.26/Si heterolayers. / Maikap, S.; Lee, Je Hun; Kim, Doh Y. et al.
In: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, Vol. 22, No. 1, 01.2004, p. 52-56.

Research output: Contribution to journal › Journal Article › peer-review

TY - JOUR

T1 - Physical and electrical properties of ultrathin HfO2/HfSi xOy stacked gate dielectrics on compressively strained-Si0.74Ge0.26/Si heterolayers

AU - Maikap, S.

AU - Lee, Je Hun

AU - Kim, Doh Y.

AU - Mahapatra, R.

AU - Ray, S. K.

AU - Song, Jae Hoon

AU - No, Y. S.

AU - Choi, Won Kook

PY - 2004/1

Y1 - 2004/1

N2 - The physical and electrical properties of HfO2/HfSi xOy stacked gate dielectrics with EOT of 2.8 nm deposited directly on Si heterolayer were investigated. The electrical properties in terms of capacitance-voltage, conductance-voltage, hysteresis, current density-electric field and shift in gate voltage under constant current stress were studied using a metal-oxide-semiconductor structure. Chemical analysis of the interfacial layer using SIMS and AES depth profile revealed that the interfacial layer is a silicate-like compound. Results show a lower charge trapping property under constant current stress for the HfO2 along with interfacial layer.

AB - The physical and electrical properties of HfO2/HfSi xOy stacked gate dielectrics with EOT of 2.8 nm deposited directly on Si heterolayer were investigated. The electrical properties in terms of capacitance-voltage, conductance-voltage, hysteresis, current density-electric field and shift in gate voltage under constant current stress were studied using a metal-oxide-semiconductor structure. Chemical analysis of the interfacial layer using SIMS and AES depth profile revealed that the interfacial layer is a silicate-like compound. Results show a lower charge trapping property under constant current stress for the HfO2 along with interfacial layer.

UR - https://www.scopus.com/pages/publications/1642268821

M3 - 文章

AN - SCOPUS:1642268821

SN - 1071-1023

VL - 22

SP - 52

EP - 56

JO - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

JF - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

IS - 1

ER -

Physical and electrical properties of ultrathin HfO₂/HfSi _xO_y stacked gate dielectrics on compressively strained-Si_0.74Ge_0.26/Si heterolayers

Abstract

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