@inproceedings{9219b9a1454a492ba6b9efb19edf2110,
title = "Physical properties of MgZnO film grown by RF magnetron sputtering using ZnO/MgO (80/20 wt%) target",
abstract = "This work investigates the physical properties of the MgxZn 1-xO films. MgxZn1-xO films were deposited by RF magnetron sputtering system using a 6 inch ZnO/MgO (80/20 wt%) target. The XPS, Hall measurement, and transparent performance are measured. The XPS results show that there is high Carbon element content on the surface of Mg xZn1-xO maybe due to the contamination and the average of the Mg content is about 25 at. %. The XRD results indicate that the appearance of only (111) peaks for as-grown MgxZn1-xO film is a sign of the cubic single phase. In this study, the MgxZn1-xO film show high transparency with transmittances over 90 % in the visible region (400 ∼ 700nm) and the sharp absorption edge is visible in UV region due to the Mg content. Therefore, the Hall measurement of MgxZn 1-xO films which were deposited at lower RF power show the higher doping concentration, the lower resistivity and higher mobility as a function of the annealing temperatures. The experimental results indicate that Mg xZn1-xO film with 800°C annealing contains more oxygen vacancies which play the role of donor. Since oxygen vacancies generate states in the band gap and cause an increase in conductivity.",
keywords = "MgO, Sputtering system, Transparent conductive oxide, Transparent performance, X-ray diffraction, X-ray photoelectron spectroscopy, ZnO",
author = "Hsueh, {Kuang Po} and Tun, {Chun Ju} and Chiu, {Hsien Chin}",
year = "2010",
doi = "10.1117/12.842643",
language = "英语",
isbn = "9780819479990",
series = "Proceedings of SPIE - The International Society for Optical Engineering",
booktitle = "Oxide-based Materials and Devices",
note = "Oxide-based Materials and Devices ; Conference date: 24-01-2010 Through 27-01-2010",
}