Physics and modeling of Ge-on-Insulator MOSFETs

Albert Chin; H. L. Kao; Y. Y. Tseng; D. S. Yu; C. C. Chen; S. P. McAlister; C. C. Chi

doi:10.1109/ESSDER.2005.1546641

Physics and modeling of Ge-on-Insulator MOSFETs

Albert Chin^*, H. L. Kao, Y. Y. Tseng, D. S. Yu, C. C. Chen, S. P. McAlister, C. C. Chi

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

16 Scopus citations

Abstract

We have used process and device simulation tools (TSupreme and Medici) to analyze the measured DC characteristics of Ge-on-Insulator (GOI) MOSFETs. The GOI devices have higher drive current than do their Si counterparts, due to the smaller effective mass (m*) and smaller Ge energy bandgap - however this also causes a larger off-state I_ds leakage current. The simulations predict that the GOI MOSFETs have better RF gain and noise performance compared with Si devices. This is important for high speed operation as down-scaling continues.

Original language	English
Title of host publication	Proceedings of ESSDERC 2005
Subtitle of host publication	35th European Solid-State Device Research Conference
Pages	285-288
Number of pages	4
DOIs	https://doi.org/10.1109/ESSDER.2005.1546641
State	Published - 2005
Externally published	Yes
Event	ESSDERC 2005: 35th European Solid-State Device Research Conference - Grenoble, France Duration: 12 09 2005 → 16 09 2005

Publication series

Name	Proceedings of ESSDERC 2005: 35th European Solid-State Device Research Conference
Volume	2005

Conference

Conference	ESSDERC 2005: 35th European Solid-State Device Research Conference
Country/Territory	France
City	Grenoble
Period	12/09/05 → 16/09/05

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10.1109/ESSDER.2005.1546641

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Chin, A., Kao, H. L., Tseng, Y. Y., Yu, D. S., Chen, C. C., McAlister, S. P., & Chi, C. C. (2005). Physics and modeling of Ge-on-Insulator MOSFETs. In Proceedings of ESSDERC 2005: 35th European Solid-State Device Research Conference (pp. 285-288). Article 1546641 (Proceedings of ESSDERC 2005: 35th European Solid-State Device Research Conference; Vol. 2005). https://doi.org/10.1109/ESSDER.2005.1546641

@inproceedings{7db06e946cf5410dbb85f8e54340e630,

title = "Physics and modeling of Ge-on-Insulator MOSFETs",

abstract = "We have used process and device simulation tools (TSupreme and Medici) to analyze the measured DC characteristics of Ge-on-Insulator (GOI) MOSFETs. The GOI devices have higher drive current than do their Si counterparts, due to the smaller effective mass (m*) and smaller Ge energy bandgap - however this also causes a larger off-state Ids leakage current. The simulations predict that the GOI MOSFETs have better RF gain and noise performance compared with Si devices. This is important for high speed operation as down-scaling continues.",

author = "Albert Chin and Kao, {H. L.} and Tseng, {Y. Y.} and Yu, {D. S.} and Chen, {C. C.} and McAlister, {S. P.} and Chi, {C. C.}",

year = "2005",

doi = "10.1109/ESSDER.2005.1546641",

language = "英语",

isbn = "0780392035",

series = "Proceedings of ESSDERC 2005: 35th European Solid-State Device Research Conference",

pages = "285--288",

booktitle = "Proceedings of ESSDERC 2005",

note = "ESSDERC 2005: 35th European Solid-State Device Research Conference ; Conference date: 12-09-2005 Through 16-09-2005",

}

Chin, A, Kao, HL, Tseng, YY, Yu, DS, Chen, CC, McAlister, SP & Chi, CC 2005, Physics and modeling of Ge-on-Insulator MOSFETs. in Proceedings of ESSDERC 2005: 35th European Solid-State Device Research Conference., 1546641, Proceedings of ESSDERC 2005: 35th European Solid-State Device Research Conference, vol. 2005, pp. 285-288, ESSDERC 2005: 35th European Solid-State Device Research Conference, Grenoble, France, 12/09/05. https://doi.org/10.1109/ESSDER.2005.1546641

Physics and modeling of Ge-on-Insulator MOSFETs. / Chin, Albert; Kao, H. L.; Tseng, Y. Y. et al.
Proceedings of ESSDERC 2005: 35th European Solid-State Device Research Conference. 2005. p. 285-288 1546641 (Proceedings of ESSDERC 2005: 35th European Solid-State Device Research Conference; Vol. 2005).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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T1 - Physics and modeling of Ge-on-Insulator MOSFETs

AU - Chin, Albert

AU - Kao, H. L.

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AU - McAlister, S. P.

AU - Chi, C. C.

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AB - We have used process and device simulation tools (TSupreme and Medici) to analyze the measured DC characteristics of Ge-on-Insulator (GOI) MOSFETs. The GOI devices have higher drive current than do their Si counterparts, due to the smaller effective mass (m*) and smaller Ge energy bandgap - however this also causes a larger off-state Ids leakage current. The simulations predict that the GOI MOSFETs have better RF gain and noise performance compared with Si devices. This is important for high speed operation as down-scaling continues.

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M3 - 会议稿件

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BT - Proceedings of ESSDERC 2005

T2 - ESSDERC 2005: 35th European Solid-State Device Research Conference

Y2 - 12 September 2005 through 16 September 2005

ER -

Physics and modeling of Ge-on-Insulator MOSFETs

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