Plasma grown gate oxides on tensile-strained Si1-yCy/Si heterostructure

R. Mahapatra; S. Maikap; G. S. Kar; S. K. Ray

Plasma grown gate oxides on tensile-strained Si_1-yC_y/Si heterostructure

R. Mahapatra, S. Maikap, G. S. Kar, S. K. Ray^*

^*Corresponding author for this work

Indian Institute of Technology Kharagpur

Research output: Contribution to journal › Conference article › peer-review

Abstract

Plasma oxidation (<200°C) of tensile strained Si_1-yC_y on Si in O₂ ambient is reported. Electrical properties of grown oxide have been carried out using a metal-oxide-semiconductor structure. Fixed oxide charge density and mid-gap interface state density are found to be 5.9 × 10¹⁰ cm^-2 and 2.2 × 10¹¹ cm^-2 eV^-1, respectively. Oxide film exhibits hole trapping behavior under Fowler-Nordheim (F-N) constant current stressing.

Original language	English
Pages (from-to)	1118-1120
Number of pages	3
Journal	Proceedings of SPIE - The International Society for Optical Engineering
Volume	4746 II
State	Published - 2002
Externally published	Yes
Event	Physics of Semiconductor Devices - Delhi, India Duration: 11 12 2001 → 15 12 2001

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title = "Plasma grown gate oxides on tensile-strained Si1-yCy/Si heterostructure",

abstract = "Plasma oxidation (<200°C) of tensile strained Si1-yCy on Si in O2 ambient is reported. Electrical properties of grown oxide have been carried out using a metal-oxide-semiconductor structure. Fixed oxide charge density and mid-gap interface state density are found to be 5.9 × 1010 cm-2 and 2.2 × 1011 cm-2 eV-1, respectively. Oxide film exhibits hole trapping behavior under Fowler-Nordheim (F-N) constant current stressing.",

author = "R. Mahapatra and S. Maikap and Kar, {G. S.} and Ray, {S. K.}",

year = "2002",

language = "英语",

volume = "4746 II",

pages = "1118--1120",

journal = "Proceedings of SPIE - The International Society for Optical Engineering",

issn = "0277-786X",

publisher = "SPIE",

note = "Physics of Semiconductor Devices ; Conference date: 11-12-2001 Through 15-12-2001",

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TY - JOUR

T1 - Plasma grown gate oxides on tensile-strained Si1-yCy/Si heterostructure

AU - Mahapatra, R.

AU - Maikap, S.

AU - Kar, G. S.

AU - Ray, S. K.

PY - 2002

Y1 - 2002

N2 - Plasma oxidation (<200°C) of tensile strained Si1-yCy on Si in O2 ambient is reported. Electrical properties of grown oxide have been carried out using a metal-oxide-semiconductor structure. Fixed oxide charge density and mid-gap interface state density are found to be 5.9 × 1010 cm-2 and 2.2 × 1011 cm-2 eV-1, respectively. Oxide film exhibits hole trapping behavior under Fowler-Nordheim (F-N) constant current stressing.

AB - Plasma oxidation (<200°C) of tensile strained Si1-yCy on Si in O2 ambient is reported. Electrical properties of grown oxide have been carried out using a metal-oxide-semiconductor structure. Fixed oxide charge density and mid-gap interface state density are found to be 5.9 × 1010 cm-2 and 2.2 × 1011 cm-2 eV-1, respectively. Oxide film exhibits hole trapping behavior under Fowler-Nordheim (F-N) constant current stressing.

UR - http://www.scopus.com/inward/record.url?scp=0036408077&partnerID=8YFLogxK

M3 - 会议文章

AN - SCOPUS:0036408077

SN - 0277-786X

VL - 4746 II

SP - 1118

EP - 1120

JO - Proceedings of SPIE - The International Society for Optical Engineering

JF - Proceedings of SPIE - The International Society for Optical Engineering

T2 - Physics of Semiconductor Devices

Y2 - 11 December 2001 through 15 December 2001

ER -

Plasma grown gate oxides on tensile-strained Si_1-yC_y/Si heterostructure

Abstract

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