Platinum-aluminum alloy electrode for retention improvement of gadolinium oxide resistive switching memory

Jer Chyi Wang; De Yuan Jian; Yu Ren Ye; Li Chun Chang

doi:10.1007/s00339-013-7874-1

Platinum-aluminum alloy electrode for retention improvement of gadolinium oxide resistive switching memory

Jer Chyi Wang^*, De Yuan Jian, Yu Ren Ye, Li Chun Chang

^*Corresponding author for this work

Department of Electronic Engineering

Research output: Contribution to journal › Journal Article › peer-review

7 Scopus citations

Abstract

Platinum-aluminum (Pt-Al) alloy top electrode on the retention improvement of gadolinium oxide (Gd_xO_y) resistive switching memory was investigated. The aluminum oxide (Al_xO_y) formation at the Pt-Al alloy top electrode and Gd_xO_y interface will lead to the high Schottky barrier height. Further, the more aluminum incorporation can suppress the crystallization of platinum electrode after the post-metallization annealing. Both the crystallization suppression of Pt top electrode and the interfacial aluminum oxide formation will prevent the oxygen ions from out-diffusion through Pt grain boundaries, responsible for the retention enhancement of the Gd_xO_y resistive switching memory.

Original language	English
Pages (from-to)	37-40
Number of pages	4
Journal	Applied Physics A: Materials Science and Processing
Volume	113
Issue number	1
DOIs	https://doi.org/10.1007/s00339-013-7874-1
State	Published - 10 2013

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title = "Platinum-aluminum alloy electrode for retention improvement of gadolinium oxide resistive switching memory",

abstract = "Platinum-aluminum (Pt-Al) alloy top electrode on the retention improvement of gadolinium oxide (GdxOy) resistive switching memory was investigated. The aluminum oxide (AlxOy) formation at the Pt-Al alloy top electrode and GdxOy interface will lead to the high Schottky barrier height. Further, the more aluminum incorporation can suppress the crystallization of platinum electrode after the post-metallization annealing. Both the crystallization suppression of Pt top electrode and the interfacial aluminum oxide formation will prevent the oxygen ions from out-diffusion through Pt grain boundaries, responsible for the retention enhancement of the GdxOy resistive switching memory.",

author = "Wang, \{Jer Chyi\} and Jian, \{De Yuan\} and Ye, \{Yu Ren\} and Chang, \{Li Chun\}",

year = "2013",

month = oct,

doi = "10.1007/s00339-013-7874-1",

language = "英语",

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T1 - Platinum-aluminum alloy electrode for retention improvement of gadolinium oxide resistive switching memory

AU - Wang, Jer Chyi

AU - Jian, De Yuan

AU - Ye, Yu Ren

AU - Chang, Li Chun

PY - 2013/10

Y1 - 2013/10

N2 - Platinum-aluminum (Pt-Al) alloy top electrode on the retention improvement of gadolinium oxide (GdxOy) resistive switching memory was investigated. The aluminum oxide (AlxOy) formation at the Pt-Al alloy top electrode and GdxOy interface will lead to the high Schottky barrier height. Further, the more aluminum incorporation can suppress the crystallization of platinum electrode after the post-metallization annealing. Both the crystallization suppression of Pt top electrode and the interfacial aluminum oxide formation will prevent the oxygen ions from out-diffusion through Pt grain boundaries, responsible for the retention enhancement of the GdxOy resistive switching memory.

AB - Platinum-aluminum (Pt-Al) alloy top electrode on the retention improvement of gadolinium oxide (GdxOy) resistive switching memory was investigated. The aluminum oxide (AlxOy) formation at the Pt-Al alloy top electrode and GdxOy interface will lead to the high Schottky barrier height. Further, the more aluminum incorporation can suppress the crystallization of platinum electrode after the post-metallization annealing. Both the crystallization suppression of Pt top electrode and the interfacial aluminum oxide formation will prevent the oxygen ions from out-diffusion through Pt grain boundaries, responsible for the retention enhancement of the GdxOy resistive switching memory.

UR - https://www.scopus.com/pages/publications/84885590254

U2 - 10.1007/s00339-013-7874-1

DO - 10.1007/s00339-013-7874-1

M3 - 文章

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SN - 0947-8396

VL - 113

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EP - 40

JO - Applied Physics A: Materials Science and Processing

JF - Applied Physics A: Materials Science and Processing

IS - 1

ER -

Platinum-aluminum alloy electrode for retention improvement of gadolinium oxide resistive switching memory

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