@inproceedings{aa55c841703f4919b2e06f234cb23973,
title = "Polyoxide grown on metal induced re-crystallized polysilicon combined with CF4 plasma",
abstract = "In the paper, the characteristics of thermal polyoxide grown on re-crystallized polysilicon by Metal-Induced -Crystallization (MIC) have been studied. The oxide quality can be improved due to smoother polysilicon/polyoxide interface and lower charge trapping by MIC re-crystallization. Furthermore, the polyoxide combined with CF4 plasma treatment, which exhibited better electrical characteristics such as larger breakdown electric field, and larger charge-to-breakdown. This is believed to be due to that the incorporated fluorine is existed within the oxide and polysilicon interface to form strong Si-F bond for oxide quality integrity.",
author = "Kao, {Chyuan Haur} and Lee, {C. H.} and Chan, {T. C.} and Chiu, {J. S.} and Chen, {C. S.} and Chen, {K. S.} and Chuang, {C. S.} and Chen, {S. K.}",
year = "2008",
doi = "10.1109/ICSICT.2008.4734746",
language = "英语",
isbn = "9781424421855",
series = "International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT",
pages = "1170--1172",
booktitle = "ICSICT 2008 - 2008 9th International Conference on Solid-State and Integrated-Circuit Technology Proceedings",
note = "2008 9th International Conference on Solid-State and Integrated-Circuit Technology, ICSICT 2008 ; Conference date: 20-10-2008 Through 23-10-2008",
}