Post deposition annealing effects on the reliability of ALD HfO2 films on strained-Si0.8Ge0.2 layers

P. J. Tzeng; S. Maikap; W. Z. Lai; C. S. Liang; P. S. Chen; L. S. Lee; C. W. Liu

Post deposition annealing effects on the reliability of ALD HfO₂ films on strained-Si_0.8Ge_0.2 layers

P. J. Tzeng^*, S. Maikap, W. Z. Lai, C. S. Liang, P. S. Chen, L. S. Lee, C. W. Liu

^*Corresponding author for this work

Research output: Contribution to conference › Conference Paper › peer-review

1 Scopus citations

Abstract

The reliability of strained-Si_0.8Ge_0.2 and Si MOS devices with HfO₂ gate dielectrics prepared by atomic layer deposition (ALD) is investigated. The interfacial layer at HfO ₂/semiconductor observed is silicate-like at low annealing temperature (∼600°C) and SiO₂-like at high annealing temperature (900°C). The quality of HfO₂/SiGe interface is slightly inferior as compared to the HfO₂/Si interface, due to the elemental Ge at the interface. The reliability characteristics for both the HfO₂/Si and HfO₂/Si_0.8Ge_0.2 structures are improved with increasing the PDA temperature up to 800°C, due to the thicker interfacial oxide layer grown at the interface. However, with higher PDA temperature (∼800°C), serious crystallization of HfO ₂ film leads to more bulk traps induced electrical degradation.

Original language	English
Pages	29-32
Number of pages	4
State	Published - 2004
Externally published	Yes
Event	Proceedings of the 11th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2004 - , Taiwan Duration: 05 07 2004 → 08 07 2004

Conference

Conference	Proceedings of the 11th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2004
Country/Territory	Taiwan
Period	05/07/04 → 08/07/04

Cite this

@conference{416c2dcae6bb469ba0c154c8748a7271,

title = "Post deposition annealing effects on the reliability of ALD HfO2 films on strained-Si0.8Ge0.2 layers",

abstract = "The reliability of strained-Si0.8Ge0.2 and Si MOS devices with HfO2 gate dielectrics prepared by atomic layer deposition (ALD) is investigated. The interfacial layer at HfO 2/semiconductor observed is silicate-like at low annealing temperature (∼600°C) and SiO2-like at high annealing temperature (900°C). The quality of HfO2/SiGe interface is slightly inferior as compared to the HfO2/Si interface, due to the elemental Ge at the interface. The reliability characteristics for both the HfO2/Si and HfO2/Si0.8Ge0.2 structures are improved with increasing the PDA temperature up to 800°C, due to the thicker interfacial oxide layer grown at the interface. However, with higher PDA temperature (∼800°C), serious crystallization of HfO 2 film leads to more bulk traps induced electrical degradation.",

author = "Tzeng, {P. J.} and S. Maikap and Lai, {W. Z.} and Liang, {C. S.} and Chen, {P. S.} and Lee, {L. S.} and Liu, {C. W.}",

year = "2004",

language = "英语",

pages = "29--32",

note = "Proceedings of the 11th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2004 ; Conference date: 05-07-2004 Through 08-07-2004",

}

Post deposition annealing effects on the reliability of ALD HfO₂ films on strained-Si_0.8Ge_0.2 layers. / Tzeng, P. J.; Maikap, S.; Lai, W. Z. et al.
2004. 29-32 Paper presented at Proceedings of the 11th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2004, Taiwan.

Research output: Contribution to conference › Conference Paper › peer-review

TY - CONF

T1 - Post deposition annealing effects on the reliability of ALD HfO2 films on strained-Si0.8Ge0.2 layers

AU - Tzeng, P. J.

AU - Maikap, S.

AU - Lai, W. Z.

AU - Liang, C. S.

AU - Chen, P. S.

AU - Lee, L. S.

AU - Liu, C. W.

PY - 2004

Y1 - 2004

N2 - The reliability of strained-Si0.8Ge0.2 and Si MOS devices with HfO2 gate dielectrics prepared by atomic layer deposition (ALD) is investigated. The interfacial layer at HfO 2/semiconductor observed is silicate-like at low annealing temperature (∼600°C) and SiO2-like at high annealing temperature (900°C). The quality of HfO2/SiGe interface is slightly inferior as compared to the HfO2/Si interface, due to the elemental Ge at the interface. The reliability characteristics for both the HfO2/Si and HfO2/Si0.8Ge0.2 structures are improved with increasing the PDA temperature up to 800°C, due to the thicker interfacial oxide layer grown at the interface. However, with higher PDA temperature (∼800°C), serious crystallization of HfO 2 film leads to more bulk traps induced electrical degradation.

AB - The reliability of strained-Si0.8Ge0.2 and Si MOS devices with HfO2 gate dielectrics prepared by atomic layer deposition (ALD) is investigated. The interfacial layer at HfO 2/semiconductor observed is silicate-like at low annealing temperature (∼600°C) and SiO2-like at high annealing temperature (900°C). The quality of HfO2/SiGe interface is slightly inferior as compared to the HfO2/Si interface, due to the elemental Ge at the interface. The reliability characteristics for both the HfO2/Si and HfO2/Si0.8Ge0.2 structures are improved with increasing the PDA temperature up to 800°C, due to the thicker interfacial oxide layer grown at the interface. However, with higher PDA temperature (∼800°C), serious crystallization of HfO 2 film leads to more bulk traps induced electrical degradation.

UR - http://www.scopus.com/inward/record.url?scp=14844320813&partnerID=8YFLogxK

M3 - 论文

AN - SCOPUS:14844320813

SP - 29

EP - 32

T2 - Proceedings of the 11th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2004

Y2 - 5 July 2004 through 8 July 2004

ER -

Post deposition annealing effects on the reliability of ALD HfO₂ films on strained-Si_0.8Ge_0.2 layers

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