Preliminary steps toward industrialization of Cu-III-VI2 thin-film solar cells: Development of an intelligent design tool for non-stoichiometric photovoltaic materials

H. H. Chang; H. Y. Ueng; H. L. Hwang

doi:10.1016/S0022-3697(03)00257-9

Preliminary steps toward industrialization of Cu-III-VI₂ thin-film solar cells: Development of an intelligent design tool for non-stoichiometric photovoltaic materials

H. H. Chang, H. Y. Ueng, H. L. Hwang^*

^*Corresponding author for this work

Research output: Contribution to journal › Journal Article › peer-review

6 Scopus citations

Abstract

In this paper, we introduce the idea of intelligent design of thin film CIGS solar cell, and we focus on the methodology of material design. We first describe in detail the calculation of the neutral defect concentrations of non-stoichiometric CuInSe₂, CuGaSe₂ and ZnO under specific atomic chemical potential conditions (μ_x = 0, x = Cu,In/Ga,Zn), and this calculation is the main procedure in the intelligent design and the key to the device design and process design. We then calculate the carrier concentrations and the electrical properties of these materials of different atomic constitutions. The main functions of this CAD tool are demonstrated.

Original language	English
Pages (from-to)	2047-2053
Number of pages	7
Journal	Journal of Physics and Chemistry of Solids
Volume	64
Issue number	9-10
DOIs	https://doi.org/10.1016/S0022-3697(03)00257-9
State	Published - 09 2003
Externally published	Yes

Keywords

Chalcopyrites
Non-stoichiometry
ZnO

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

Access to Document

10.1016/S0022-3697(03)00257-9

Cite this

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title = "Preliminary steps toward industrialization of Cu-III-VI2 thin-film solar cells: Development of an intelligent design tool for non-stoichiometric photovoltaic materials",

abstract = "In this paper, we introduce the idea of intelligent design of thin film CIGS solar cell, and we focus on the methodology of material design. We first describe in detail the calculation of the neutral defect concentrations of non-stoichiometric CuInSe2, CuGaSe2 and ZnO under specific atomic chemical potential conditions (μx = 0, x = Cu,In/Ga,Zn), and this calculation is the main procedure in the intelligent design and the key to the device design and process design. We then calculate the carrier concentrations and the electrical properties of these materials of different atomic constitutions. The main functions of this CAD tool are demonstrated.",

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Preliminary steps toward industrialization of Cu-III-VI₂ thin-film solar cells: Development of an intelligent design tool for non-stoichiometric photovoltaic materials. / Chang, H. H.; Ueng, H. Y.; Hwang, H. L.
In: Journal of Physics and Chemistry of Solids, Vol. 64, No. 9-10, 09.2003, p. 2047-2053.

Research output: Contribution to journal › Journal Article › peer-review

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AB - In this paper, we introduce the idea of intelligent design of thin film CIGS solar cell, and we focus on the methodology of material design. We first describe in detail the calculation of the neutral defect concentrations of non-stoichiometric CuInSe2, CuGaSe2 and ZnO under specific atomic chemical potential conditions (μx = 0, x = Cu,In/Ga,Zn), and this calculation is the main procedure in the intelligent design and the key to the device design and process design. We then calculate the carrier concentrations and the electrical properties of these materials of different atomic constitutions. The main functions of this CAD tool are demonstrated.

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KW - Non-stoichiometry

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