Preparation and characterization of GaN photonic crystal arrays by focused ion beam technology

In this study, nano-patterned triangular photonic crystal arrays have been prepared on the surface of blue InGaN/GaN light-emitting diodes by focused ion beam technology. The nitride-based multilayer thin films were grown on c-plane (0001) sapphire substrates by low-pressure metal-organic chemical vapor deposition. The major emission peak wavelength was 468 nm. The nano-patterned array structures were implemented using a dual-beam nanotechnology workstation SMI 3050. The acceleration voltage of Ga ion beam was 30 kV, and the ion beam current was about 100 pA. The air-hole diameter in the triangular array has been 150 nm, while the periodicity ranged from 300 nm to 800 nm. The light-current measurements were carried out to reveal the light output intensity characteristics of the devices. In addition, the current-voltage study was shown with increased operation voltage from 3.0. V to 4.05. V while the period was decreased from 800 nm to 300 nm.