TY - JOUR
T1 - Preparation and characterization of thin‐film solar cells with ag/c60/mapbi3/cztse/mo/fto multilayered structures
AU - Chang, Tsung Wen
AU - Tseng, Chzu Chiang
AU - Chen, Dave W.
AU - Wu, Gwomei
AU - Yang, Chia Ling
AU - Chen, Lung Chien
N1 - Publisher Copyright:
© 2021 by the authors. Licensee MDPI, Basel, Switzerland.
PY - 2021/6/1
Y1 - 2021/6/1
N2 - New solar cells with Ag/C60/MAPbI3/Cu2ZnSnSe4 (CZTSe)/Mo/FTO multilayered structures on glass substrates have been prepared and investigated in this study. The electron‐transport layer, active photovoltaic layer, and hole‐transport layer were made of C60, CH3NH3PbI3 (MAPbI3) perovskite, and CZTSe, respectively. The CZTSe hole‐transport layers were deposited by magnetic sputtering, with the various thermal annealing temperatures at 300 °C, 400 °C, and 500 °C, and the film thickness was also varied at 50~300 nm The active photovoltaic MAPbI3 films were prepared using a two‐step spin‐coating method on the CZTSe hole‐transport layers. It has been revealed that the crystalline structure and domain size of the MAPbI3 perovskite films could be substantially improved. Finally, n‐type C60 was vacuum‐evaporated to be the electronic transport layer. The 50 nm C60 thin film, in conjunction with 100 nm Ag electrode layer, provided adequate electron current transport in the multilayered structures. The solar cell current density–voltage characteristics were evaluated and compared with the thin‐film microstructures. The photo‐electronic power‐conversion efficiency could be improved to 14.2% when the annealing temperature was 500 °C and the film thickness was 200 nm. The thin‐film solar cell characteristics of open‐circuit voltage, short‐circuit current density, fill factor, series‐resistance, and Pmax were found to be 1.07 V, 19.69 mA/cm2, 67.39%, 18.5 Ω and 1.42 mW, respectively.
AB - New solar cells with Ag/C60/MAPbI3/Cu2ZnSnSe4 (CZTSe)/Mo/FTO multilayered structures on glass substrates have been prepared and investigated in this study. The electron‐transport layer, active photovoltaic layer, and hole‐transport layer were made of C60, CH3NH3PbI3 (MAPbI3) perovskite, and CZTSe, respectively. The CZTSe hole‐transport layers were deposited by magnetic sputtering, with the various thermal annealing temperatures at 300 °C, 400 °C, and 500 °C, and the film thickness was also varied at 50~300 nm The active photovoltaic MAPbI3 films were prepared using a two‐step spin‐coating method on the CZTSe hole‐transport layers. It has been revealed that the crystalline structure and domain size of the MAPbI3 perovskite films could be substantially improved. Finally, n‐type C60 was vacuum‐evaporated to be the electronic transport layer. The 50 nm C60 thin film, in conjunction with 100 nm Ag electrode layer, provided adequate electron current transport in the multilayered structures. The solar cell current density–voltage characteristics were evaluated and compared with the thin‐film microstructures. The photo‐electronic power‐conversion efficiency could be improved to 14.2% when the annealing temperature was 500 °C and the film thickness was 200 nm. The thin‐film solar cell characteristics of open‐circuit voltage, short‐circuit current density, fill factor, series‐resistance, and Pmax were found to be 1.07 V, 19.69 mA/cm2, 67.39%, 18.5 Ω and 1.42 mW, respectively.
KW - C60
KW - CZTSe
KW - Perovskite
KW - Thin‐film solar cell
UR - http://www.scopus.com/inward/record.url?scp=85108322387&partnerID=8YFLogxK
U2 - 10.3390/molecules26123516
DO - 10.3390/molecules26123516
M3 - 文章
C2 - 34207705
AN - SCOPUS:85108322387
SN - 1420-3049
VL - 26
JO - Molecules
JF - Molecules
IS - 12
M1 - 3516
ER -