Preparation and characterizations of visible light-responsive (Ag-In-Zn)S thin-film electrode by chemical bath deposition

Ching Chen Wu; Kong Wei Cheng; Wen Sheng Chang; Tai Chou Lee

doi:10.1016/j.jtice.2008.09.001

Preparation and characterizations of visible light-responsive (Ag-In-Zn)S thin-film electrode by chemical bath deposition

Ching Chen Wu, Kong Wei Cheng, Wen Sheng Chang, Tai Chou Lee^*

^*Corresponding author for this work

Department of Chemical and Materials Engineering

Research output: Contribution to journal › Journal Article › peer-review

37 Scopus citations

Abstract

The thin-film form of (Ag-In-Zn)S quaternary semiconductor was prepared from acidic aqueous solutions. A low temperature and low cost chemical deposition method is presented. Grazing incidence X-ray diffraction, UV-visible spectroscopy, scanning electron microscopy, and X-ray photoelectron spectroscopy characterized the crystal phases, optical absorptions, surface morphologies, and compositions of the films. Samples are polycrystalline composed of ZnS/AgInS₂/AgIn₅S₈ crystal phases. The thickness and optical absorption edge, depending on dipping numbers, lie between 0.58 and 1.29 μm and 2 and 3.1 eV, respectively. Photoresponse measurements were recorded by a scanning potentiostat in a standard three-electrode electrochemical setup under a 300 W Xe lamp illumination with the intensity of 100 mW/cm². For the sample dipped in the chemical bath for three times (Sample C), the photocurrent density of 6.275 mA/cm² was obtained in contact with K₂SO₃ and Na₂S aqueous electrolyte with an applied potential of 1 V vs. SCE reference electrode. The corresponding maximum photon-to-current efficiency is 55% at λ = 500 nm.

Original language	English
Pages (from-to)	180-187
Number of pages	8
Journal	Journal of the Taiwan Institute of Chemical Engineers
Volume	40
Issue number	2
DOIs	https://doi.org/10.1016/j.jtice.2008.09.001
State	Published - 03 2009

Keywords

Chemical synthesis
Electrochemical properties
Optical properties
Semiconductors
X-ray diffraction

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10.1016/j.jtice.2008.09.001

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title = "Preparation and characterizations of visible light-responsive (Ag-In-Zn)S thin-film electrode by chemical bath deposition",

abstract = "The thin-film form of (Ag-In-Zn)S quaternary semiconductor was prepared from acidic aqueous solutions. A low temperature and low cost chemical deposition method is presented. Grazing incidence X-ray diffraction, UV-visible spectroscopy, scanning electron microscopy, and X-ray photoelectron spectroscopy characterized the crystal phases, optical absorptions, surface morphologies, and compositions of the films. Samples are polycrystalline composed of ZnS/AgInS2/AgIn5S8 crystal phases. The thickness and optical absorption edge, depending on dipping numbers, lie between 0.58 and 1.29 μm and 2 and 3.1 eV, respectively. Photoresponse measurements were recorded by a scanning potentiostat in a standard three-electrode electrochemical setup under a 300 W Xe lamp illumination with the intensity of 100 mW/cm2. For the sample dipped in the chemical bath for three times (Sample C), the photocurrent density of 6.275 mA/cm2 was obtained in contact with K2SO3 and Na2S aqueous electrolyte with an applied potential of 1 V vs. SCE reference electrode. The corresponding maximum photon-to-current efficiency is 55\% at λ = 500 nm.",

keywords = "Chemical synthesis, Electrochemical properties, Optical properties, Semiconductors, X-ray diffraction",

author = "Wu, \{Ching Chen\} and Cheng, \{Kong Wei\} and Chang, \{Wen Sheng\} and Lee, \{Tai Chou\}",

year = "2009",

month = mar,

doi = "10.1016/j.jtice.2008.09.001",

language = "英语",

volume = "40",

pages = "180--187",

journal = "Journal of the Taiwan Institute of Chemical Engineers",

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TY - JOUR

T1 - Preparation and characterizations of visible light-responsive (Ag-In-Zn)S thin-film electrode by chemical bath deposition

AU - Wu, Ching Chen

AU - Cheng, Kong Wei

AU - Chang, Wen Sheng

AU - Lee, Tai Chou

PY - 2009/3

Y1 - 2009/3

N2 - The thin-film form of (Ag-In-Zn)S quaternary semiconductor was prepared from acidic aqueous solutions. A low temperature and low cost chemical deposition method is presented. Grazing incidence X-ray diffraction, UV-visible spectroscopy, scanning electron microscopy, and X-ray photoelectron spectroscopy characterized the crystal phases, optical absorptions, surface morphologies, and compositions of the films. Samples are polycrystalline composed of ZnS/AgInS2/AgIn5S8 crystal phases. The thickness and optical absorption edge, depending on dipping numbers, lie between 0.58 and 1.29 μm and 2 and 3.1 eV, respectively. Photoresponse measurements were recorded by a scanning potentiostat in a standard three-electrode electrochemical setup under a 300 W Xe lamp illumination with the intensity of 100 mW/cm2. For the sample dipped in the chemical bath for three times (Sample C), the photocurrent density of 6.275 mA/cm2 was obtained in contact with K2SO3 and Na2S aqueous electrolyte with an applied potential of 1 V vs. SCE reference electrode. The corresponding maximum photon-to-current efficiency is 55% at λ = 500 nm.

AB - The thin-film form of (Ag-In-Zn)S quaternary semiconductor was prepared from acidic aqueous solutions. A low temperature and low cost chemical deposition method is presented. Grazing incidence X-ray diffraction, UV-visible spectroscopy, scanning electron microscopy, and X-ray photoelectron spectroscopy characterized the crystal phases, optical absorptions, surface morphologies, and compositions of the films. Samples are polycrystalline composed of ZnS/AgInS2/AgIn5S8 crystal phases. The thickness and optical absorption edge, depending on dipping numbers, lie between 0.58 and 1.29 μm and 2 and 3.1 eV, respectively. Photoresponse measurements were recorded by a scanning potentiostat in a standard three-electrode electrochemical setup under a 300 W Xe lamp illumination with the intensity of 100 mW/cm2. For the sample dipped in the chemical bath for three times (Sample C), the photocurrent density of 6.275 mA/cm2 was obtained in contact with K2SO3 and Na2S aqueous electrolyte with an applied potential of 1 V vs. SCE reference electrode. The corresponding maximum photon-to-current efficiency is 55% at λ = 500 nm.

KW - Chemical synthesis

KW - Electrochemical properties

KW - Optical properties

KW - Semiconductors

KW - X-ray diffraction

UR - https://www.scopus.com/pages/publications/62249210293

U2 - 10.1016/j.jtice.2008.09.001

DO - 10.1016/j.jtice.2008.09.001

M3 - 文章

AN - SCOPUS:62249210293

SN - 1876-1070

VL - 40

SP - 180

EP - 187

JO - Journal of the Taiwan Institute of Chemical Engineers

JF - Journal of the Taiwan Institute of Chemical Engineers

IS - 2

ER -

Preparation and characterizations of visible light-responsive (Ag-In-Zn)S thin-film electrode by chemical bath deposition

Abstract

Keywords

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