Preparation and photoelectrochemical applications of chemically synthesized Sb-doped p-AgIn5S8 film electrodes

Kong Wei Cheng; Chao Ming Huang; Guan Ting Pan; Wen Sheng Chang; Tai Chou Lee; Thomas C.K. Yang

doi:10.1016/j.physb.2008.12.011

Preparation and photoelectrochemical applications of chemically synthesized Sb-doped p-AgIn₅S₈ film electrodes

Kong Wei Cheng^*
, Chao Ming Huang
, Guan Ting Pan
, Wen Sheng Chang
, Tai Chou Lee
, Thomas C.K. Yang

^*Corresponding author for this work

Department of Chemical and Materials Engineering

Kun Shan University
National Taipei University of Technology
Industrial Technology Research Institute of Taiwan
National Chung Cheng University

Research output: Contribution to journal › Journal Article › peer-review

7 Scopus citations

Abstract

Chemically synthesized Sb-doped p-type AgIn₅S₈ films with several parameters, such as ratios of Sb/Ag in the reaction solution and multiple depositions of films, were grown on indium-tin-oxide coated glass substrates in this study. The X-ray diffraction patterns of samples show the cubic AgIn₅S₈ phase in these films. The thicknesses, energy band gaps, and carrier densities of these samples were in the ranges of 537-776 nm, 1.71-1.73 eV, and 6.57×10¹⁴-8.82×10¹⁴ cm^-3, respectively. The maximum photocurrent density of samples with an external potential of -3.5 V vs. a Pt electrode was found to be -5.02 mA/cm² under illumination using a 300 W Xe lamp system. Crown

Original language	English
Pages (from-to)	1264-1270
Number of pages	7
Journal	Physica B: Condensed Matter
Volume	404
Issue number	8-11
DOIs	https://doi.org/10.1016/j.physb.2008.12.011
State	Published - 01 05 2009

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

SDG 7 Affordable and Clean Energy

Keywords

Chemical conversion
Compound
Crystalline
X-ray diffraction

Access to Document

10.1016/j.physb.2008.12.011

Cite this

@article{a38a28f7eba9430f9ae502a241762ad6,

title = "Preparation and photoelectrochemical applications of chemically synthesized Sb-doped p-AgIn5S8 film electrodes",

abstract = "Chemically synthesized Sb-doped p-type AgIn5S8 films with several parameters, such as ratios of Sb/Ag in the reaction solution and multiple depositions of films, were grown on indium-tin-oxide coated glass substrates in this study. The X-ray diffraction patterns of samples show the cubic AgIn5S8 phase in these films. The thicknesses, energy band gaps, and carrier densities of these samples were in the ranges of 537-776 nm, 1.71-1.73 eV, and 6.57×1014-8.82×1014 cm-3, respectively. The maximum photocurrent density of samples with an external potential of -3.5 V vs. a Pt electrode was found to be -5.02 mA/cm2 under illumination using a 300 W Xe lamp system. Crown",

keywords = "Chemical conversion, Compound, Crystalline, X-ray diffraction",

author = "Cheng, \{Kong Wei\} and Huang, \{Chao Ming\} and Pan, \{Guan Ting\} and Chang, \{Wen Sheng\} and Lee, \{Tai Chou\} and Yang, \{Thomas C.K.\}",

year = "2009",

month = may,

day = "1",

doi = "10.1016/j.physb.2008.12.011",

language = "英语",

volume = "404",

pages = "1264--1270",

journal = "Physica B: Condensed Matter",

issn = "0921-4526",

publisher = "Elsevier B.V.",

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TY - JOUR

T1 - Preparation and photoelectrochemical applications of chemically synthesized Sb-doped p-AgIn5S8 film electrodes

AU - Cheng, Kong Wei

AU - Huang, Chao Ming

AU - Pan, Guan Ting

AU - Chang, Wen Sheng

AU - Lee, Tai Chou

AU - Yang, Thomas C.K.

PY - 2009/5/1

Y1 - 2009/5/1

N2 - Chemically synthesized Sb-doped p-type AgIn5S8 films with several parameters, such as ratios of Sb/Ag in the reaction solution and multiple depositions of films, were grown on indium-tin-oxide coated glass substrates in this study. The X-ray diffraction patterns of samples show the cubic AgIn5S8 phase in these films. The thicknesses, energy band gaps, and carrier densities of these samples were in the ranges of 537-776 nm, 1.71-1.73 eV, and 6.57×1014-8.82×1014 cm-3, respectively. The maximum photocurrent density of samples with an external potential of -3.5 V vs. a Pt electrode was found to be -5.02 mA/cm2 under illumination using a 300 W Xe lamp system. Crown

AB - Chemically synthesized Sb-doped p-type AgIn5S8 films with several parameters, such as ratios of Sb/Ag in the reaction solution and multiple depositions of films, were grown on indium-tin-oxide coated glass substrates in this study. The X-ray diffraction patterns of samples show the cubic AgIn5S8 phase in these films. The thicknesses, energy band gaps, and carrier densities of these samples were in the ranges of 537-776 nm, 1.71-1.73 eV, and 6.57×1014-8.82×1014 cm-3, respectively. The maximum photocurrent density of samples with an external potential of -3.5 V vs. a Pt electrode was found to be -5.02 mA/cm2 under illumination using a 300 W Xe lamp system. Crown

KW - Chemical conversion

KW - Compound

KW - Crystalline

KW - X-ray diffraction

UR - https://www.scopus.com/pages/publications/64149084538

U2 - 10.1016/j.physb.2008.12.011

DO - 10.1016/j.physb.2008.12.011

M3 - 文章

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SN - 0921-4526

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