Preparation of low-temperature fluorinated oxides by anodic oxidation in dilute hydrofluosilicic acid (H2SiF6) solution

Ming Jer Jeng; Jenn Gwo Hwu

doi:10.1116/1.580493

Preparation of low-temperature fluorinated oxides by anodic oxidation in dilute hydrofluosilicic acid (H₂SiF₆) solution

Ming Jer Jeng^*
, Jenn Gwo Hwu

^*Corresponding author for this work

National Taiwan University

Research output: Contribution to journal › Journal Article › peer-review

4 Scopus citations

Abstract

Anodic oxidation at room temperature in dilute H₂SiF₆ solution is proposed as a method to grow the low-temperature fluorinated oxides. It was found that two competing mechanisms exist in anodization. One is the growing mechanism due to constant current anodization and the other is the etching mechanism due to the existing HF solution. It was observed that fluorine atoms are incorporated into the anodic oxides. A growth rate of about 1 μm/h was found that is much higher than by liquid phase deposition (LPD) techinques reported nowadays. Also, the anodic oxides show less leakage current and higher breakdown field properties than the conventional LPD oxides. An excellent breakdown field strength of 10 MV/cm was found in this work.

Original language	English
Pages (from-to)	369-373
Number of pages	5
Journal	Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Volume	15
Issue number	2
DOIs	https://doi.org/10.1116/1.580493
State	Published - 1997
Externally published	Yes

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title = "Preparation of low-temperature fluorinated oxides by anodic oxidation in dilute hydrofluosilicic acid (H2SiF6) solution",

abstract = "Anodic oxidation at room temperature in dilute H2SiF6 solution is proposed as a method to grow the low-temperature fluorinated oxides. It was found that two competing mechanisms exist in anodization. One is the growing mechanism due to constant current anodization and the other is the etching mechanism due to the existing HF solution. It was observed that fluorine atoms are incorporated into the anodic oxides. A growth rate of about 1 μm/h was found that is much higher than by liquid phase deposition (LPD) techinques reported nowadays. Also, the anodic oxides show less leakage current and higher breakdown field properties than the conventional LPD oxides. An excellent breakdown field strength of 10 MV/cm was found in this work.",

author = "Jeng, \{Ming Jer\} and Hwu, \{Jenn Gwo\}",

year = "1997",

doi = "10.1116/1.580493",

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issn = "0734-2101",

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T1 - Preparation of low-temperature fluorinated oxides by anodic oxidation in dilute hydrofluosilicic acid (H2SiF6) solution

AU - Jeng, Ming Jer

AU - Hwu, Jenn Gwo

PY - 1997

Y1 - 1997

N2 - Anodic oxidation at room temperature in dilute H2SiF6 solution is proposed as a method to grow the low-temperature fluorinated oxides. It was found that two competing mechanisms exist in anodization. One is the growing mechanism due to constant current anodization and the other is the etching mechanism due to the existing HF solution. It was observed that fluorine atoms are incorporated into the anodic oxides. A growth rate of about 1 μm/h was found that is much higher than by liquid phase deposition (LPD) techinques reported nowadays. Also, the anodic oxides show less leakage current and higher breakdown field properties than the conventional LPD oxides. An excellent breakdown field strength of 10 MV/cm was found in this work.

AB - Anodic oxidation at room temperature in dilute H2SiF6 solution is proposed as a method to grow the low-temperature fluorinated oxides. It was found that two competing mechanisms exist in anodization. One is the growing mechanism due to constant current anodization and the other is the etching mechanism due to the existing HF solution. It was observed that fluorine atoms are incorporated into the anodic oxides. A growth rate of about 1 μm/h was found that is much higher than by liquid phase deposition (LPD) techinques reported nowadays. Also, the anodic oxides show less leakage current and higher breakdown field properties than the conventional LPD oxides. An excellent breakdown field strength of 10 MV/cm was found in this work.

UR - https://www.scopus.com/pages/publications/0031496818

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DO - 10.1116/1.580493

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SN - 0734-2101

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JO - Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

JF - Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

IS - 2

ER -

Preparation of low-temperature fluorinated oxides by anodic oxidation in dilute hydrofluosilicic acid (H₂SiF₆) solution

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