Processing and device performance of GaN power rectifiers

A. P. Zhang*, G. T. Dang, X. A. Cao, H. Cho, F. Ren, J. Han, J. I. Chyi, C. M. Lee, T. E. Nee, C. C. Chuo, G. C. Chi, S. N.G. Chu, R. G. Wilson, S. J. Pearton

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review


Mesa and planar geometry GaN Schottky rectifiers were fabricated on 3-12μm thick epitaxial layers. In planar diodes utilizing resistive GaN, a reverse breakdown voltage of 3.1 kV was achieved in structures containing p-guard rings and employing extension of the Schottky contact edge over an oxide layer. In devices without edge termination, the reverse breakdown voltage was 2.3 kV. Mesa diodes fabricated on conducting GaN had breakdown voltages in the range 200-400 V, with on-state resistances as low as 6m Ω·cm-2.

Original languageEnglish
Pages (from-to)W11.67.1 - W11.67.6
JournalMaterials Research Society Symposium - Proceedings
StatePublished - 2000
Externally publishedYes
EventThe 1999 MRS Fall Meeting - Symposium W 'GaN and Related Alloys' - Boston, MA, USA
Duration: 28 11 199903 12 1999


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