Properties of Cu(thd)2 as a precursor to prepare Cu/SiO 2 catalyst using the atomic layer epitaxy technique

Ching S. Chen; Jarrn H. Lin; Jainn H. You; Chi R. Chen

doi:10.1021/ja063083d

Properties of Cu(thd)₂ as a precursor to prepare Cu/SiO ₂ catalyst using the atomic layer epitaxy technique

Ching S. Chen^*, Jarrn H. Lin, Jainn H. You, Chi R. Chen

^*Corresponding author for this work

Center for General Education

Research output: Contribution to journal › Journal Article › peer-review

75 Scopus citations

Abstract

The new Cu/SiO₂ catalyst is developed by the atomic layer epitaxy (ALE) method. The ALE-Cu/SiO₂ catalyst with high dispersion and nanoscale Cu particles appears to have very different catalytic properties from those of the typical Cu-based catalysts, which have satisfactory thermal stability to resist the sintering of Cu particles at 773 K. Due to the formation of small Cu particles, the ALE-Cu/SiO₂ can strongly bind CO and give high catalytic activity for CO₂ converted to CO in the reverse water-gas-shift reaction. The catalytic activity decreases in the order of 2.4% ALE-Cu/SiO₂ = 2% Pt/SiO₂ > 2% Pd/SiO₂ ≫ 10.3% IM-Cu/SiO₂.

Original language	English
Pages (from-to)	15950-15951
Number of pages	2
Journal	Journal of the American Chemical Society
Volume	128
Issue number	50
DOIs	https://doi.org/10.1021/ja063083d
State	Published - 20 12 2006

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title = "Properties of Cu(thd)2 as a precursor to prepare Cu/SiO 2 catalyst using the atomic layer epitaxy technique",

abstract = "The new Cu/SiO2 catalyst is developed by the atomic layer epitaxy (ALE) method. The ALE-Cu/SiO2 catalyst with high dispersion and nanoscale Cu particles appears to have very different catalytic properties from those of the typical Cu-based catalysts, which have satisfactory thermal stability to resist the sintering of Cu particles at 773 K. Due to the formation of small Cu particles, the ALE-Cu/SiO2 can strongly bind CO and give high catalytic activity for CO2 converted to CO in the reverse water-gas-shift reaction. The catalytic activity decreases in the order of 2.4% ALE-Cu/SiO2 = 2% Pt/SiO2 > 2% Pd/SiO2 ≫ 10.3% IM-Cu/SiO2.",

author = "Chen, {Ching S.} and Lin, {Jarrn H.} and You, {Jainn H.} and Chen, {Chi R.}",

year = "2006",

month = dec,

day = "20",

doi = "10.1021/ja063083d",

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volume = "128",

pages = "15950--15951",

journal = "Journal of the American Chemical Society",

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TY - JOUR

T1 - Properties of Cu(thd)2 as a precursor to prepare Cu/SiO 2 catalyst using the atomic layer epitaxy technique

AU - Chen, Ching S.

AU - Lin, Jarrn H.

AU - You, Jainn H.

AU - Chen, Chi R.

PY - 2006/12/20

Y1 - 2006/12/20

N2 - The new Cu/SiO2 catalyst is developed by the atomic layer epitaxy (ALE) method. The ALE-Cu/SiO2 catalyst with high dispersion and nanoscale Cu particles appears to have very different catalytic properties from those of the typical Cu-based catalysts, which have satisfactory thermal stability to resist the sintering of Cu particles at 773 K. Due to the formation of small Cu particles, the ALE-Cu/SiO2 can strongly bind CO and give high catalytic activity for CO2 converted to CO in the reverse water-gas-shift reaction. The catalytic activity decreases in the order of 2.4% ALE-Cu/SiO2 = 2% Pt/SiO2 > 2% Pd/SiO2 ≫ 10.3% IM-Cu/SiO2.

AB - The new Cu/SiO2 catalyst is developed by the atomic layer epitaxy (ALE) method. The ALE-Cu/SiO2 catalyst with high dispersion and nanoscale Cu particles appears to have very different catalytic properties from those of the typical Cu-based catalysts, which have satisfactory thermal stability to resist the sintering of Cu particles at 773 K. Due to the formation of small Cu particles, the ALE-Cu/SiO2 can strongly bind CO and give high catalytic activity for CO2 converted to CO in the reverse water-gas-shift reaction. The catalytic activity decreases in the order of 2.4% ALE-Cu/SiO2 = 2% Pt/SiO2 > 2% Pd/SiO2 ≫ 10.3% IM-Cu/SiO2.

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U2 - 10.1021/ja063083d

DO - 10.1021/ja063083d

M3 - 文章

AN - SCOPUS:33845568518

SN - 0002-7863

VL - 128

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JO - Journal of the American Chemical Society

JF - Journal of the American Chemical Society

IS - 50

ER -

Properties of Cu(thd)₂ as a precursor to prepare Cu/SiO ₂ catalyst using the atomic layer epitaxy technique

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