TY - JOUR
T1 - Properties of optical thin films and coatings prepared by reactive electron-beam deposition with and without ion bombardments
AU - Tsai, Rung Ywan
AU - Shiau, Sen Chrong
AU - Lee, Chii Hua
AU - Ho, Fang Chuan
AU - Hua, Mu Yi
PY - 1997/12
Y1 - 1997/12
N2 - The structural, microstructural, optical, and mechanical properties of MgF2, SiO2, and TiO2 films prepared by reactive electron-beam deposition (EBD) and reactive ion-assisted deposition (IAD) were systematically investigated using an x-ray diffractometer (XRD), a transmission electron microscope, a spectrophotometer, and a microhardness tester, respectively. A mixture gas of pure argon and pure oxygen was used as the reactant. The mean ion energy was about 90 eV for the IAD process. Results showed that the preferred orientation, refractive index, and hardness of the films were strongly influenced by ion bombardments, although the variations of the phases and grain sizes were insignificant. With the fixed x-ray incident angle of 2 deg, the measured preferred orientation of polycrystalline MgF2 films deposited on unheated glass substrate by IAD was [110], which was consistent with the powder XRD pattern of MgF2, whereas that of the film deposited by EBD at a substrate temperature of 280°C was [111]. The refractive index and hardness of the films deposited by IAD were always higher than those of the respective films deposited by EBD at a substrate temperature of 280°C, which were due to the higher packing density caused by energetic ion bombardments. A 24-layer near-IR cutoff filter of alternating SiO2 and TiO2 layers prepared by IAD was more efficient on near-IR isolation and more thermally stable than that prepared by EBD. The optical thickness variation for the filter prepared by IAD over a substrate holder radius of 30 cm was less than 1%.
AB - The structural, microstructural, optical, and mechanical properties of MgF2, SiO2, and TiO2 films prepared by reactive electron-beam deposition (EBD) and reactive ion-assisted deposition (IAD) were systematically investigated using an x-ray diffractometer (XRD), a transmission electron microscope, a spectrophotometer, and a microhardness tester, respectively. A mixture gas of pure argon and pure oxygen was used as the reactant. The mean ion energy was about 90 eV for the IAD process. Results showed that the preferred orientation, refractive index, and hardness of the films were strongly influenced by ion bombardments, although the variations of the phases and grain sizes were insignificant. With the fixed x-ray incident angle of 2 deg, the measured preferred orientation of polycrystalline MgF2 films deposited on unheated glass substrate by IAD was [110], which was consistent with the powder XRD pattern of MgF2, whereas that of the film deposited by EBD at a substrate temperature of 280°C was [111]. The refractive index and hardness of the films deposited by IAD were always higher than those of the respective films deposited by EBD at a substrate temperature of 280°C, which were due to the higher packing density caused by energetic ion bombardments. A 24-layer near-IR cutoff filter of alternating SiO2 and TiO2 layers prepared by IAD was more efficient on near-IR isolation and more thermally stable than that prepared by EBD. The optical thickness variation for the filter prepared by IAD over a substrate holder radius of 30 cm was less than 1%.
KW - E-beam deposition
KW - Ion bombardments
KW - Near-IR cuttoff filters
KW - Structural, microstructural, optical, and mechanical properties
UR - http://www.scopus.com/inward/record.url?scp=0010846909&partnerID=8YFLogxK
U2 - 10.1117/1.601582
DO - 10.1117/1.601582
M3 - 文章
AN - SCOPUS:0010846909
SN - 0091-3286
VL - 36
SP - 3433
EP - 3438
JO - Optical Engineering
JF - Optical Engineering
IS - 12
ER -