Pure-play GaN foundry technology for 50V applications

Che Kai Lin, Fan Hsiu Huang, Jhih Han Du, Sheng Wen Peng, Tung Yao Chou, Wei Chou Wang, Jya Shian Wu, Richard Kuo, Clement Huang, Walter Wohlmuth, Chih Wen Huang, Shinichiro Takatani, Wen Kai Wang

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

1 Scopus citations

Abstract

In this paper, we present a 50V GaN HEMT technology portfolio and focuses on layout optimization, fabrication, and device modeling. A 100W PA has been demonstrated with custom heat-sink and second harmonic tuning. The newly developed 50V technology enables high power amplifier, pulsed radar, CATV, and LTE applications utilizing supply voltages of 50V for L- to C- band operational frequencies. Our pure-play GaN Foundry service supports RF MMIC and discrete device applications with comprehensive specifications and wafer acceptance tests.

Original languageEnglish
Title of host publication2015 IEEE International Conference on Microwaves, Communications, Antennas and Electronic Systems, COMCAS 2015
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781479974733
DOIs
StatePublished - 17 12 2015
Externally publishedYes
EventIEEE International Conference on Microwaves, Communications, Antennas and Electronic Systems, COMCAS 2015 - Tel-Aviv, Israel
Duration: 02 11 201504 11 2015

Publication series

Name2015 IEEE International Conference on Microwaves, Communications, Antennas and Electronic Systems, COMCAS 2015

Conference

ConferenceIEEE International Conference on Microwaves, Communications, Antennas and Electronic Systems, COMCAS 2015
Country/TerritoryIsrael
CityTel-Aviv
Period02/11/1504/11/15

Bibliographical note

Publisher Copyright:
© 2015 IEEE.

Keywords

  • 50V
  • AlGaN/GaN
  • SiC
  • base station
  • field-plate
  • harmonic
  • pulse

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