Abstract
In this paper, we present a 50V GaN HEMT technology portfolio and focuses on layout optimization, fabrication, and device modeling. A 100W PA has been demonstrated with custom heat-sink and second harmonic tuning. The newly developed 50V technology enables high power amplifier, pulsed radar, CATV, and LTE applications utilizing supply voltages of 50V for L- to C- band operational frequencies. Our pure-play GaN Foundry service supports RF MMIC and discrete device applications with comprehensive specifications and wafer acceptance tests.
Original language | English |
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Title of host publication | 2015 IEEE International Conference on Microwaves, Communications, Antennas and Electronic Systems, COMCAS 2015 |
Publisher | Institute of Electrical and Electronics Engineers Inc. |
ISBN (Electronic) | 9781479974733 |
DOIs | |
State | Published - 17 12 2015 |
Externally published | Yes |
Event | IEEE International Conference on Microwaves, Communications, Antennas and Electronic Systems, COMCAS 2015 - Tel-Aviv, Israel Duration: 02 11 2015 → 04 11 2015 |
Publication series
Name | 2015 IEEE International Conference on Microwaves, Communications, Antennas and Electronic Systems, COMCAS 2015 |
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Conference
Conference | IEEE International Conference on Microwaves, Communications, Antennas and Electronic Systems, COMCAS 2015 |
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Country/Territory | Israel |
City | Tel-Aviv |
Period | 02/11/15 → 04/11/15 |
Bibliographical note
Publisher Copyright:© 2015 IEEE.
Keywords
- 50V
- AlGaN/GaN
- SiC
- base station
- field-plate
- harmonic
- pulse