Quality of the oxidation interface of AlGaN in enhancement-mode AlGaN/GaN high-electron mobility transistors

Hsien Chin Chiu; Chih Wei Yang; Chao Hung Chen; Chia Hsuan Wu

doi:10.1109/TED.2012.2215872

Quality of the oxidation interface of AlGaN in enhancement-mode AlGaN/GaN high-electron mobility transistors

Hsien Chin Chiu^*, Chih Wei Yang, Chao Hung Chen, Chia Hsuan Wu

^*Corresponding author for this work

Department of Electronic Engineering

Chang Gung University

Research output: Contribution to journal › Journal Article › peer-review

37 Scopus citations

Abstract

Enhancement-mode AlGaN/GaN high-electron mobility transistors (HEMTs) were realized by applying the O₂ and N₂O plasma oxidation method to the AlGaN Schottky layers. After the postannealing process, the threshold voltage $V_{\rm th} of conventional depletion-mode GaN HEMTs was-3.1 V, and this value was shifted to ?3.1 V when either N₂O or O₂ plasma oxidation treatment was used. X-ray photoelectron spectroscopy (XPS) analysis revealed that both treatments formed an Al ₂O₃/GA₂O₃ compound oxide layer. The decomposition of N-O bonds in the N₂O plasma suppressed the formation of nitrogen vacancy traps and ensured low roughness of the AlGaN surface during oxidation. This nitridation process also reduced the 1/f$ noise.

Original language	English
Article number	6327346
Pages (from-to)	3334-3338
Number of pages	5
Journal	IEEE Transactions on Electron Devices
Volume	59
Issue number	12
DOIs	https://doi.org/10.1109/TED.2012.2215872
State	Published - 2012

Keywords

Enhancement-mode (E-mode)
GaN
high-electron mobility transistor (HEMT)

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10.1109/TED.2012.2215872

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title = "Quality of the oxidation interface of AlGaN in enhancement-mode AlGaN/GaN high-electron mobility transistors",

abstract = "Enhancement-mode AlGaN/GaN high-electron mobility transistors (HEMTs) were realized by applying the O2 and N2O plasma oxidation method to the AlGaN Schottky layers. After the postannealing process, the threshold voltage \$V\textbackslash{}rm th of conventional depletion-mode GaN HEMTs was-3.1 V, and this value was shifted to ?3.1 V when either N2O or O2 plasma oxidation treatment was used. X-ray photoelectron spectroscopy (XPS) analysis revealed that both treatments formed an Al 2O3/GA2O3 compound oxide layer. The decomposition of N-O bonds in the N2O plasma suppressed the formation of nitrogen vacancy traps and ensured low roughness of the AlGaN surface during oxidation. This nitridation process also reduced the 1/f\$ noise.",

keywords = "Enhancement-mode (E-mode), GaN, high-electron mobility transistor (HEMT)",

author = "Chiu, \{Hsien Chin\} and Yang, \{Chih Wei\} and Chen, \{Chao Hung\} and Wu, \{Chia Hsuan\}",

year = "2012",

doi = "10.1109/TED.2012.2215872",

language = "英语",

volume = "59",

pages = "3334--3338",

journal = "IEEE Transactions on Electron Devices",

issn = "0018-9383",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "12",

}

TY - JOUR

T1 - Quality of the oxidation interface of AlGaN in enhancement-mode AlGaN/GaN high-electron mobility transistors

AU - Chiu, Hsien Chin

AU - Yang, Chih Wei

AU - Chen, Chao Hung

AU - Wu, Chia Hsuan

PY - 2012

Y1 - 2012

N2 - Enhancement-mode AlGaN/GaN high-electron mobility transistors (HEMTs) were realized by applying the O2 and N2O plasma oxidation method to the AlGaN Schottky layers. After the postannealing process, the threshold voltage $V\rm th of conventional depletion-mode GaN HEMTs was-3.1 V, and this value was shifted to ?3.1 V when either N2O or O2 plasma oxidation treatment was used. X-ray photoelectron spectroscopy (XPS) analysis revealed that both treatments formed an Al 2O3/GA2O3 compound oxide layer. The decomposition of N-O bonds in the N2O plasma suppressed the formation of nitrogen vacancy traps and ensured low roughness of the AlGaN surface during oxidation. This nitridation process also reduced the 1/f$ noise.

AB - Enhancement-mode AlGaN/GaN high-electron mobility transistors (HEMTs) were realized by applying the O2 and N2O plasma oxidation method to the AlGaN Schottky layers. After the postannealing process, the threshold voltage $V\rm th of conventional depletion-mode GaN HEMTs was-3.1 V, and this value was shifted to ?3.1 V when either N2O or O2 plasma oxidation treatment was used. X-ray photoelectron spectroscopy (XPS) analysis revealed that both treatments formed an Al 2O3/GA2O3 compound oxide layer. The decomposition of N-O bonds in the N2O plasma suppressed the formation of nitrogen vacancy traps and ensured low roughness of the AlGaN surface during oxidation. This nitridation process also reduced the 1/f$ noise.

KW - Enhancement-mode (E-mode)

KW - GaN

KW - high-electron mobility transistor (HEMT)

UR - https://www.scopus.com/pages/publications/84870295837

U2 - 10.1109/TED.2012.2215872

DO - 10.1109/TED.2012.2215872

M3 - 文章

AN - SCOPUS:84870295837

SN - 0018-9383

VL - 59

SP - 3334

EP - 3338

JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

IS - 12

M1 - 6327346

ER -

Quality of the oxidation interface of AlGaN in enhancement-mode AlGaN/GaN high-electron mobility transistors

Abstract

Keywords

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