Quasi-two-dimensional superconductivity in wurtzite-structured InN films

D. C. Ling; J. H. Cheng; Y. Y. Lo; C. H. Du; A. P. Chiu; C. A. Chang; P. H. Chang

doi:10.1002/pssb.200777396

Quasi-two-dimensional superconductivity in wurtzite-structured InN films

D. C. Ling^*, J. H. Cheng, Y. Y. Lo, C. H. Du, A. P. Chiu, C. A. Chang, P. H. Chang

^*Corresponding author for this work

Department of Electronic Engineering

Research output: Contribution to journal › Journal Article › peer-review

9 Scopus citations

Abstract

C-axis oriented InN films with wurtzite structure were grown on sapphire (0001) substrate by MOCVD method. Superconductivity with transition onset temperature T_c,onset around 3.5 K has been characterized by magnetotransport measurements in fields up to 9 Tesla for films with carrier concentration in the range of 1×10¹⁹ cm^-3 to 7×10²⁰ cm^-3. Among them, the film with a nitridation buffer layer has the highest zero-resistance temperature T_c0 of 2 K. The normal-state magnetoresistance follows Kohler's rule ΔR / R∞ (H / R)², indicating that there is a single species of charge carrier with single scattering time at all points on the Fermi surface. The extrapolated value of zero-temperature upper critical field H_c2^ab(0) and H_c2^c(0) is estimated to be 5900 G and 2800 G, respectively, giving rise to the anisotropy parameter γ about 2.1. The angular dependence of the upper critical field is in good agreement with the behavior predicted by Lawrence-Doniach model in the two-dimensional (2D) limit strongly suggesting that the InN film is a quasi-2D superconductor.

Original language	English
Pages (from-to)	4594-4597
Number of pages	4
Journal	physica status solidi (b)
Volume	244
Issue number	12
DOIs	https://doi.org/10.1002/pssb.200777396
State	Published - 12 2007

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title = "Quasi-two-dimensional superconductivity in wurtzite-structured InN films",

abstract = "C-axis oriented InN films with wurtzite structure were grown on sapphire (0001) substrate by MOCVD method. Superconductivity with transition onset temperature Tc,onset around 3.5 K has been characterized by magnetotransport measurements in fields up to 9 Tesla for films with carrier concentration in the range of 1×1019 cm-3 to 7×1020 cm-3. Among them, the film with a nitridation buffer layer has the highest zero-resistance temperature Tc0 of 2 K. The normal-state magnetoresistance follows Kohler's rule ΔR / R∞ (H / R)2, indicating that there is a single species of charge carrier with single scattering time at all points on the Fermi surface. The extrapolated value of zero-temperature upper critical field Hc2ab(0) and Hc2c(0) is estimated to be 5900 G and 2800 G, respectively, giving rise to the anisotropy parameter γ about 2.1. The angular dependence of the upper critical field is in good agreement with the behavior predicted by Lawrence-Doniach model in the two-dimensional (2D) limit strongly suggesting that the InN film is a quasi-2D superconductor.",

author = "Ling, {D. C.} and Cheng, {J. H.} and Lo, {Y. Y.} and Du, {C. H.} and Chiu, {A. P.} and Chang, {C. A.} and Chang, {P. H.}",

year = "2007",

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doi = "10.1002/pssb.200777396",

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T1 - Quasi-two-dimensional superconductivity in wurtzite-structured InN films

AU - Ling, D. C.

AU - Cheng, J. H.

AU - Lo, Y. Y.

AU - Du, C. H.

AU - Chiu, A. P.

AU - Chang, C. A.

AU - Chang, P. H.

PY - 2007/12

Y1 - 2007/12

N2 - C-axis oriented InN films with wurtzite structure were grown on sapphire (0001) substrate by MOCVD method. Superconductivity with transition onset temperature Tc,onset around 3.5 K has been characterized by magnetotransport measurements in fields up to 9 Tesla for films with carrier concentration in the range of 1×1019 cm-3 to 7×1020 cm-3. Among them, the film with a nitridation buffer layer has the highest zero-resistance temperature Tc0 of 2 K. The normal-state magnetoresistance follows Kohler's rule ΔR / R∞ (H / R)2, indicating that there is a single species of charge carrier with single scattering time at all points on the Fermi surface. The extrapolated value of zero-temperature upper critical field Hc2ab(0) and Hc2c(0) is estimated to be 5900 G and 2800 G, respectively, giving rise to the anisotropy parameter γ about 2.1. The angular dependence of the upper critical field is in good agreement with the behavior predicted by Lawrence-Doniach model in the two-dimensional (2D) limit strongly suggesting that the InN film is a quasi-2D superconductor.

AB - C-axis oriented InN films with wurtzite structure were grown on sapphire (0001) substrate by MOCVD method. Superconductivity with transition onset temperature Tc,onset around 3.5 K has been characterized by magnetotransport measurements in fields up to 9 Tesla for films with carrier concentration in the range of 1×1019 cm-3 to 7×1020 cm-3. Among them, the film with a nitridation buffer layer has the highest zero-resistance temperature Tc0 of 2 K. The normal-state magnetoresistance follows Kohler's rule ΔR / R∞ (H / R)2, indicating that there is a single species of charge carrier with single scattering time at all points on the Fermi surface. The extrapolated value of zero-temperature upper critical field Hc2ab(0) and Hc2c(0) is estimated to be 5900 G and 2800 G, respectively, giving rise to the anisotropy parameter γ about 2.1. The angular dependence of the upper critical field is in good agreement with the behavior predicted by Lawrence-Doniach model in the two-dimensional (2D) limit strongly suggesting that the InN film is a quasi-2D superconductor.

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Quasi-two-dimensional superconductivity in wurtzite-structured InN films

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