Redshift of edge emission from AlGaInP light-emitting diodes and correlation with electronhole recombination lifetime

N. C. Chen; C. M. Lin; C. Shen; W. C. Lien; T. Y. Lin

doi:10.1364/OE.16.020759

Redshift of edge emission from AlGaInP light-emitting diodes and correlation with electronhole recombination lifetime

N. C. Chen, C. M. Lin, C. Shen, W. C. Lien, T. Y. Lin

Graduate Institute of Electro-Optical Engineering

Research output: Contribution to journal › Journal Article › peer-review

13 Scopus citations

Abstract

The edge emission from AlGaInP light-emitting diodes showed a red-shifted peak in addition to the peak of surface emission. This shift resulted from the quantum-well absorption of the guided wave. Although the shift degrades the color quality and the extraction efficiency of the device, it helps elucidate many important optical properties of the material and the dynamics of carrier recombination, including the electron-hole recombination lifetime, the optical joint density of state, the spontaneous emission spectrum and the absorption spectrum. A simple concept of the bimolecular recombination is established. The corresponding coefficient can be expressed by a simple formula and was therefore determined.

Original language	English
Pages (from-to)	20759-20773
Number of pages	15
Journal	Optics Express
Volume	16
Issue number	25
DOIs	https://doi.org/10.1364/OE.16.020759
State	Published - 08 12 2008

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abstract = "The edge emission from AlGaInP light-emitting diodes showed a red-shifted peak in addition to the peak of surface emission. This shift resulted from the quantum-well absorption of the guided wave. Although the shift degrades the color quality and the extraction efficiency of the device, it helps elucidate many important optical properties of the material and the dynamics of carrier recombination, including the electron-hole recombination lifetime, the optical joint density of state, the spontaneous emission spectrum and the absorption spectrum. A simple concept of the bimolecular recombination is established. The corresponding coefficient can be expressed by a simple formula and was therefore determined.",

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AU - Chen, N. C.

AU - Lin, C. M.

AU - Shen, C.

AU - Lien, W. C.

AU - Lin, T. Y.

PY - 2008/12/8

Y1 - 2008/12/8

N2 - The edge emission from AlGaInP light-emitting diodes showed a red-shifted peak in addition to the peak of surface emission. This shift resulted from the quantum-well absorption of the guided wave. Although the shift degrades the color quality and the extraction efficiency of the device, it helps elucidate many important optical properties of the material and the dynamics of carrier recombination, including the electron-hole recombination lifetime, the optical joint density of state, the spontaneous emission spectrum and the absorption spectrum. A simple concept of the bimolecular recombination is established. The corresponding coefficient can be expressed by a simple formula and was therefore determined.

AB - The edge emission from AlGaInP light-emitting diodes showed a red-shifted peak in addition to the peak of surface emission. This shift resulted from the quantum-well absorption of the guided wave. Although the shift degrades the color quality and the extraction efficiency of the device, it helps elucidate many important optical properties of the material and the dynamics of carrier recombination, including the electron-hole recombination lifetime, the optical joint density of state, the spontaneous emission spectrum and the absorption spectrum. A simple concept of the bimolecular recombination is established. The corresponding coefficient can be expressed by a simple formula and was therefore determined.

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JO - Optics Express

JF - Optics Express

IS - 25

ER -

Redshift of edge emission from AlGaInP light-emitting diodes and correlation with electronhole recombination lifetime

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