Redshift of edge emission from AlGaInP light-emitting diodes and correlation with electronhole recombination lifetime

N. C. Chen, C. M. Lin, C. Shen, W. C. Lien, T. Y. Lin

Research output: Contribution to journalJournal Article peer-review

13 Scopus citations

Abstract

The edge emission from AlGaInP light-emitting diodes showed a red-shifted peak in addition to the peak of surface emission. This shift resulted from the quantum-well absorption of the guided wave. Although the shift degrades the color quality and the extraction efficiency of the device, it helps elucidate many important optical properties of the material and the dynamics of carrier recombination, including the electron-hole recombination lifetime, the optical joint density of state, the spontaneous emission spectrum and the absorption spectrum. A simple concept of the bimolecular recombination is established. The corresponding coefficient can be expressed by a simple formula and was therefore determined.

Original languageEnglish
Pages (from-to)20759-20773
Number of pages15
JournalOptics Express
Volume16
Issue number25
DOIs
StatePublished - 08 12 2008

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