Reliability evaluation and comparison of Class-E and Class-A power amplifiers with 0.18 μm CMOS technology

Wei Cheng Lin; Long Jei Du; Ya Chin King

doi:10.1109/RELPHY.2004.1315362

Reliability evaluation and comparison of Class-E and Class-A power amplifiers with 0.18 μm CMOS technology

Wei Cheng Lin, Long Jei Du, Ya Chin King

Institute of Electronics Engineering

Research output: Contribution to journal › Conference article › peer-review

3 Scopus citations

Abstract

Circuit reliability of Class-E and Class-A power amplifiers are investigated based on a degradation sub-circuit model. In this study, we've found that Class-E amplifier degrades faster than Class-A amplifier, due to the relatively large switch stress voltage between gate to drain. The decrease of power added efficiency lead to the functional failure of a power amplifier.

Original language	English
Article number	1315362
Pages (from-to)	415-416
Number of pages	2
Journal	IEEE International Reliability Physics Symposium Proceedings
Volume	2004-January
Issue number	January
DOIs	https://doi.org/10.1109/RELPHY.2004.1315362
State	Published - 2004
Externally published	Yes
Event	42nd Annual IEEE International Reliability Physics Symposium, IRPS 2004 - Phoenix, United States Duration: 25 04 2004 → 29 04 2004

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© 2004 IEEE.

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@article{99d85cd3d18a4a5d853f3539ed0fb947,

title = "Reliability evaluation and comparison of Class-E and Class-A power amplifiers with 0.18 μm CMOS technology",

abstract = "Circuit reliability of Class-E and Class-A power amplifiers are investigated based on a degradation sub-circuit model. In this study, we've found that Class-E amplifier degrades faster than Class-A amplifier, due to the relatively large switch stress voltage between gate to drain. The decrease of power added efficiency lead to the functional failure of a power amplifier.",

author = "Lin, {Wei Cheng} and Du, {Long Jei} and King, {Ya Chin}",

note = "Publisher Copyright: {\textcopyright} 2004 IEEE.; 42nd Annual IEEE International Reliability Physics Symposium, IRPS 2004 ; Conference date: 25-04-2004 Through 29-04-2004",

year = "2004",

doi = "10.1109/RELPHY.2004.1315362",

language = "英语",

volume = "2004-January",

pages = "415--416",

journal = "IEEE International Reliability Physics Symposium Proceedings",

issn = "1541-7026",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "January",

}

TY - JOUR

T1 - Reliability evaluation and comparison of Class-E and Class-A power amplifiers with 0.18 μm CMOS technology

AU - Lin, Wei Cheng

AU - Du, Long Jei

AU - King, Ya Chin

PY - 2004

Y1 - 2004

N2 - Circuit reliability of Class-E and Class-A power amplifiers are investigated based on a degradation sub-circuit model. In this study, we've found that Class-E amplifier degrades faster than Class-A amplifier, due to the relatively large switch stress voltage between gate to drain. The decrease of power added efficiency lead to the functional failure of a power amplifier.

AB - Circuit reliability of Class-E and Class-A power amplifiers are investigated based on a degradation sub-circuit model. In this study, we've found that Class-E amplifier degrades faster than Class-A amplifier, due to the relatively large switch stress voltage between gate to drain. The decrease of power added efficiency lead to the functional failure of a power amplifier.

UR - http://www.scopus.com/inward/record.url?scp=23944462162&partnerID=8YFLogxK

U2 - 10.1109/RELPHY.2004.1315362

DO - 10.1109/RELPHY.2004.1315362

M3 - 会议文章

AN - SCOPUS:23944462162

SN - 1541-7026

VL - 2004-January

SP - 415

EP - 416

JO - IEEE International Reliability Physics Symposium Proceedings

JF - IEEE International Reliability Physics Symposium Proceedings

IS - January

M1 - 1315362

T2 - 42nd Annual IEEE International Reliability Physics Symposium, IRPS 2004

Y2 - 25 April 2004 through 29 April 2004

ER -

Reliability evaluation and comparison of Class-E and Class-A power amplifiers with 0.18 μm CMOS technology

Abstract

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