Reliability evaluation and comparison of class-E and class-A power amplifiers with 0.18 μm CMOS technology

Wei Cheng Lin; Long Jei Du; Ya Chin King

Reliability evaluation and comparison of class-E and class-A power amplifiers with 0.18 μm CMOS technology

Wei Cheng Lin^*
, Long Jei Du
, Ya Chin King

^*Corresponding author for this work

National Tsing Hua University

Research output: Contribution to journal › Conference article › peer-review

2 Scopus citations

Abstract

Circuit Reliability of Class-E and Class-A power amplifiers are investigated based on a degradation sub-circuit model. In this study, we've found that Class-E amplifier degrades faster than Class-A amplifier, due to the relatively large switch stress voltage between gate to drain. The decrease of power added efficiency lead to the functional failure of a power amplifier.

Original language	English
Pages (from-to)	415-416
Number of pages	2
Journal	Annual Proceedings - Reliability Physics (Symposium)
State	Published - 2004
Externally published	Yes
Event	2004 IEEE International Reliability Physics Symposium Proceedings, 42nd Annual - Phoenix, AZ., United States Duration: 25 04 2004 → 29 04 2004

Cite this

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title = "Reliability evaluation and comparison of class-E and class-A power amplifiers with 0.18 μm CMOS technology",

abstract = "Circuit Reliability of Class-E and Class-A power amplifiers are investigated based on a degradation sub-circuit model. In this study, we've found that Class-E amplifier degrades faster than Class-A amplifier, due to the relatively large switch stress voltage between gate to drain. The decrease of power added efficiency lead to the functional failure of a power amplifier.",

author = "Lin, \{Wei Cheng\} and Du, \{Long Jei\} and King, \{Ya Chin\}",

year = "2004",

language = "英语",

pages = "415--416",

journal = "Annual Proceedings - Reliability Physics (Symposium)",

issn = "0099-9512",

note = "2004 IEEE International Reliability Physics Symposium Proceedings, 42nd Annual ; Conference date: 25-04-2004 Through 29-04-2004",

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TY - JOUR

T1 - Reliability evaluation and comparison of class-E and class-A power amplifiers with 0.18 μm CMOS technology

AU - Lin, Wei Cheng

AU - Du, Long Jei

AU - King, Ya Chin

PY - 2004

Y1 - 2004

N2 - Circuit Reliability of Class-E and Class-A power amplifiers are investigated based on a degradation sub-circuit model. In this study, we've found that Class-E amplifier degrades faster than Class-A amplifier, due to the relatively large switch stress voltage between gate to drain. The decrease of power added efficiency lead to the functional failure of a power amplifier.

AB - Circuit Reliability of Class-E and Class-A power amplifiers are investigated based on a degradation sub-circuit model. In this study, we've found that Class-E amplifier degrades faster than Class-A amplifier, due to the relatively large switch stress voltage between gate to drain. The decrease of power added efficiency lead to the functional failure of a power amplifier.

UR - https://www.scopus.com/pages/publications/3042607837

M3 - 会议文章

AN - SCOPUS:3042607837

SN - 0099-9512

SP - 415

EP - 416

JO - Annual Proceedings - Reliability Physics (Symposium)

JF - Annual Proceedings - Reliability Physics (Symposium)

T2 - 2004 IEEE International Reliability Physics Symposium Proceedings, 42nd Annual

Y2 - 25 April 2004 through 29 April 2004

ER -

Reliability evaluation and comparison of class-E and class-A power amplifiers with 0.18 μm CMOS technology

Abstract

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