Reliability evaluation and redesign of LNA

Wei Cheng Lin*, Long Jei Du, Ya Chin King

*Corresponding author for this work

Research output: Contribution to journalJournal Article peer-review

2 Scopus citations

Abstract

A device degradation model reported in our previous work is used for circuit-level reliability evaluation. The sub-circuit model can successfully describe both the DC and AC device degradation characteristics under hot-carrier stress. An analysis on Low Noise Amplifier (LNA) vulnerable to hot carrier is discussed and evaluated. The circuit performance degradation predicted by this sub-circuit model shows fairly good agreement with measurement results.

Original languageEnglish
Pages (from-to)1727-1732
Number of pages6
JournalMicroelectronics Reliability
Volume44
Issue number9-11 SPEC. ISS.
DOIs
StatePublished - 09 2004
Externally publishedYes

Fingerprint

Dive into the research topics of 'Reliability evaluation and redesign of LNA'. Together they form a unique fingerprint.

Cite this