Abstract
A device degradation model reported in our previous work is used for circuit-level reliability evaluation. The sub-circuit model can successfully describe both the DC and AC device degradation characteristics under hot-carrier stress. An analysis on Low Noise Amplifier (LNA) vulnerable to hot carrier is discussed and evaluated. The circuit performance degradation predicted by this sub-circuit model shows fairly good agreement with measurement results.
Original language | English |
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Pages (from-to) | 1727-1732 |
Number of pages | 6 |
Journal | Microelectronics Reliability |
Volume | 44 |
Issue number | 9-11 SPEC. ISS. |
DOIs | |
State | Published - 09 2004 |
Externally published | Yes |