Reliability evaluation and redesign of LNA

Wei Cheng Lin; Long Jei Du; Ya Chin King

doi:10.1016/j.microrel.2004.07.065

Reliability evaluation and redesign of LNA

Wei Cheng Lin^*
, Long Jei Du
, Ya Chin King

^*Corresponding author for this work

National Tsing Hua University

Research output: Contribution to journal › Journal Article › peer-review

2 Scopus citations

Abstract

A device degradation model reported in our previous work is used for circuit-level reliability evaluation. The sub-circuit model can successfully describe both the DC and AC device degradation characteristics under hot-carrier stress. An analysis on Low Noise Amplifier (LNA) vulnerable to hot carrier is discussed and evaluated. The circuit performance degradation predicted by this sub-circuit model shows fairly good agreement with measurement results.

Original language	English
Pages (from-to)	1727-1732
Number of pages	6
Journal	Microelectronics Reliability
Volume	44
Issue number	9-11 SPEC. ISS.
DOIs	https://doi.org/10.1016/j.microrel.2004.07.065
State	Published - 09 2004
Externally published	Yes

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10.1016/j.microrel.2004.07.065

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@article{99c6acf32db249428acc0530440d5f27,

title = "Reliability evaluation and redesign of LNA",

abstract = "A device degradation model reported in our previous work is used for circuit-level reliability evaluation. The sub-circuit model can successfully describe both the DC and AC device degradation characteristics under hot-carrier stress. An analysis on Low Noise Amplifier (LNA) vulnerable to hot carrier is discussed and evaluated. The circuit performance degradation predicted by this sub-circuit model shows fairly good agreement with measurement results.",

author = "Lin, \{Wei Cheng\} and Du, \{Long Jei\} and King, \{Ya Chin\}",

year = "2004",

month = sep,

doi = "10.1016/j.microrel.2004.07.065",

language = "英语",

volume = "44",

pages = "1727--1732",

journal = "Microelectronics Reliability",

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T1 - Reliability evaluation and redesign of LNA

AU - Lin, Wei Cheng

AU - Du, Long Jei

AU - King, Ya Chin

PY - 2004/9

Y1 - 2004/9

N2 - A device degradation model reported in our previous work is used for circuit-level reliability evaluation. The sub-circuit model can successfully describe both the DC and AC device degradation characteristics under hot-carrier stress. An analysis on Low Noise Amplifier (LNA) vulnerable to hot carrier is discussed and evaluated. The circuit performance degradation predicted by this sub-circuit model shows fairly good agreement with measurement results.

AB - A device degradation model reported in our previous work is used for circuit-level reliability evaluation. The sub-circuit model can successfully describe both the DC and AC device degradation characteristics under hot-carrier stress. An analysis on Low Noise Amplifier (LNA) vulnerable to hot carrier is discussed and evaluated. The circuit performance degradation predicted by this sub-circuit model shows fairly good agreement with measurement results.

UR - https://www.scopus.com/pages/publications/4544286230

U2 - 10.1016/j.microrel.2004.07.065

DO - 10.1016/j.microrel.2004.07.065

M3 - 文章

AN - SCOPUS:4544286230

SN - 0026-2714

VL - 44

SP - 1727

EP - 1732

JO - Microelectronics Reliability

JF - Microelectronics Reliability

IS - 9-11 SPEC. ISS.

ER -

Reliability evaluation and redesign of LNA

Abstract

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