Reliability evaluation of class-E and class-A power amplifiers with nanoscaled CMOS technology

Wei Cheng Lin; Tsung Chien Wu; Yi Hung Tsai; Long Jei Du; Ya Chin King

doi:10.1109/TED.2005.850639

Reliability evaluation of class-E and class-A power amplifiers with nanoscaled CMOS technology

Wei Cheng Lin^*, Tsung Chien Wu, Yi Hung Tsai, Long Jei Du, Ya Chin King

^*Corresponding author for this work

Department of Electrical Engineering

Research output: Contribution to journal › Journal Article › peer-review

23 Scopus citations

Abstract

Circuit reliability of class-E and class-A power amplifiers is investigated based on a newly developed degradation sub-circuit model. Measured degradation characteristics on the fabricated circuits agree well with the simulation predictions. Using this model, we have found that the class-E amplifier degrades faster than a class-A amplifier, due to a much higher stress level during switching. With a drastic decrease of PAE, a shorter lifetime is expected for a class-E amplifier.

Original language	English
Pages (from-to)	1478-1483
Number of pages	6
Journal	IEEE Transactions on Electron Devices
Volume	52
Issue number	7
DOIs	https://doi.org/10.1109/TED.2005.850639
State	Published - 07 2005
Externally published	Yes

Keywords

Class-A amplifier
Class-E amplifier
Fowler-Nordheim (FN) stress
Hot-carrier(HC) stress
Reliability

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10.1109/TED.2005.850639

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title = "Reliability evaluation of class-E and class-A power amplifiers with nanoscaled CMOS technology",

abstract = "Circuit reliability of class-E and class-A power amplifiers is investigated based on a newly developed degradation sub-circuit model. Measured degradation characteristics on the fabricated circuits agree well with the simulation predictions. Using this model, we have found that the class-E amplifier degrades faster than a class-A amplifier, due to a much higher stress level during switching. With a drastic decrease of PAE, a shorter lifetime is expected for a class-E amplifier.",

keywords = "Class-A amplifier, Class-E amplifier, Fowler-Nordheim (FN) stress, Hot-carrier(HC) stress, Reliability",

author = "Lin, {Wei Cheng} and Wu, {Tsung Chien} and Tsai, {Yi Hung} and Du, {Long Jei} and King, {Ya Chin}",

year = "2005",

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doi = "10.1109/TED.2005.850639",

language = "英语",

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pages = "1478--1483",

journal = "IEEE Transactions on Electron Devices",

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T1 - Reliability evaluation of class-E and class-A power amplifiers with nanoscaled CMOS technology

AU - Lin, Wei Cheng

AU - Wu, Tsung Chien

AU - Tsai, Yi Hung

AU - Du, Long Jei

AU - King, Ya Chin

PY - 2005/7

Y1 - 2005/7

N2 - Circuit reliability of class-E and class-A power amplifiers is investigated based on a newly developed degradation sub-circuit model. Measured degradation characteristics on the fabricated circuits agree well with the simulation predictions. Using this model, we have found that the class-E amplifier degrades faster than a class-A amplifier, due to a much higher stress level during switching. With a drastic decrease of PAE, a shorter lifetime is expected for a class-E amplifier.

AB - Circuit reliability of class-E and class-A power amplifiers is investigated based on a newly developed degradation sub-circuit model. Measured degradation characteristics on the fabricated circuits agree well with the simulation predictions. Using this model, we have found that the class-E amplifier degrades faster than a class-A amplifier, due to a much higher stress level during switching. With a drastic decrease of PAE, a shorter lifetime is expected for a class-E amplifier.

KW - Class-A amplifier

KW - Class-E amplifier

KW - Fowler-Nordheim (FN) stress

KW - Hot-carrier(HC) stress

KW - Reliability

UR - http://www.scopus.com/inward/record.url?scp=23944522129&partnerID=8YFLogxK

U2 - 10.1109/TED.2005.850639

DO - 10.1109/TED.2005.850639

M3 - 文章

AN - SCOPUS:23944522129

SN - 0018-9383

VL - 52

SP - 1478

EP - 1483

JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

IS - 7

ER -

Reliability evaluation of class-E and class-A power amplifiers with nanoscaled CMOS technology

Abstract

Keywords

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