Reliability evaluation of Gilbert Cell mixer based on a hot-carrier stressed device degradation model

Wei Cheng Lin; Long Jei Du; Ya Chin King

Reliability evaluation of Gilbert Cell mixer based on a hot-carrier stressed device degradation model

Wei Cheng Lin^*, Long Jei Du, Ya Chin King

^*Corresponding author for this work

National Tsing Hua University

Research output: Contribution to conference › Conference Paper › peer-review

2 Scopus citations

Abstract

A comprehensive device degradation model is built for circuit-level reliability evaluation. A sub-circuit model describing the device degradation under hot-carrier stress is proposed. Combining with the original model predicting device characteristics change under FN stressing in our previous work, a complete device degradation model is presented with fairly good agreements with both DC and AC characteristics. Reliability of mixed-mode Gilbert Cell mixer is investigated and analyzed as well.

Original language	English
Pages	387-390
Number of pages	4
State	Published - 2004
Externally published	Yes
Event	Digest of Papers - 2004 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium - Fort Worth, TX, United States Duration: 06 06 2004 → 08 06 2004

Conference

Conference	Digest of Papers - 2004 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium
Country/Territory	United States
City	Fort Worth, TX
Period	06/06/04 → 08/06/04

Cite this

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title = "Reliability evaluation of Gilbert Cell mixer based on a hot-carrier stressed device degradation model",

abstract = "A comprehensive device degradation model is built for circuit-level reliability evaluation. A sub-circuit model describing the device degradation under hot-carrier stress is proposed. Combining with the original model predicting device characteristics change under FN stressing in our previous work, a complete device degradation model is presented with fairly good agreements with both DC and AC characteristics. Reliability of mixed-mode Gilbert Cell mixer is investigated and analyzed as well.",

author = "Lin, {Wei Cheng} and Du, {Long Jei} and King, {Ya Chin}",

year = "2004",

language = "英语",

pages = "387--390",

note = "Digest of Papers - 2004 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium ; Conference date: 06-06-2004 Through 08-06-2004",

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Reliability evaluation of Gilbert Cell mixer based on a hot-carrier stressed device degradation model. / Lin, Wei Cheng; Du, Long Jei; King, Ya Chin.
2004. 387-390 Paper presented at Digest of Papers - 2004 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium, Fort Worth, TX, United States.

Research output: Contribution to conference › Conference Paper › peer-review

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AU - Lin, Wei Cheng

AU - Du, Long Jei

AU - King, Ya Chin

PY - 2004

Y1 - 2004

N2 - A comprehensive device degradation model is built for circuit-level reliability evaluation. A sub-circuit model describing the device degradation under hot-carrier stress is proposed. Combining with the original model predicting device characteristics change under FN stressing in our previous work, a complete device degradation model is presented with fairly good agreements with both DC and AC characteristics. Reliability of mixed-mode Gilbert Cell mixer is investigated and analyzed as well.

AB - A comprehensive device degradation model is built for circuit-level reliability evaluation. A sub-circuit model describing the device degradation under hot-carrier stress is proposed. Combining with the original model predicting device characteristics change under FN stressing in our previous work, a complete device degradation model is presented with fairly good agreements with both DC and AC characteristics. Reliability of mixed-mode Gilbert Cell mixer is investigated and analyzed as well.

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M3 - 论文

AN - SCOPUS:4444322562

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T2 - Digest of Papers - 2004 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium

Y2 - 6 June 2004 through 8 June 2004

ER -

Reliability evaluation of Gilbert Cell mixer based on a hot-carrier stressed device degradation model

Abstract

Conference

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