Abstract
In this paper, a comprehensive study of the reliability mechanisms of high-performance low-temperature polycrystalline-Si thin-film transistor (LTPS-TFT) with HfO2 gate dielectric is reported for the first time. Various bias- and temperature-stress conditions, which correspond to positive-bias stress (PBS), positive-bias temperature instability (PBTI), negative-bias stress (NBS), negative-bias temperature instability (NBTI), and hot-carrier stress, are used to differentiate the distribution and mechanism of trap density states. The generation of deep-trap states of the effective interfacial layer (IL), tail-trap states of poly-Si grain boundaries, and electron trapping of the HfO2 gate dielectric is observed for the PBS and PBTI of the HfO2 LTPS-TFT. In addition, both the deep- and tail-trap states of the effective IL are generated under NBS and NBTI of the HfO2 LTPS-TFT.
Original language | English |
---|---|
Pages (from-to) | 1153-1160 |
Number of pages | 8 |
Journal | IEEE Transactions on Electron Devices |
Volume | 55 |
Issue number | 5 |
DOIs | |
State | Published - 05 2008 |
Externally published | Yes |
Keywords
- HfO gate dielectric
- Hot-carrier stress (HCS)
- Low-temperature polycrystalline-Si thin-film transistor (LTPS-TFT)
- Negative-bias temperature instability (NBTI)
- Positive-bias temperature instability (PBTI)
- Reliability