Reliability scaling limit of 14-Å oxynitride gate dielectrics by different processing treatments

Tung Ming Pan; Chuan Hsi Liu

doi:10.1149/1.2051827

Reliability scaling limit of 14-Å oxynitride gate dielectrics by different processing treatments

Tung Ming Pan^*, Chuan Hsi Liu

^*Corresponding author for this work

Department of Electronic Engineering

Ming Chuan University

Research output: Contribution to journal › Journal Article › peer-review

1 Scopus citations

Abstract

Various ultrathin oxynitride gate dielectrics of similar thickness (∼ 1.4 nm) processed by a rapid thermal NO-nitrided oxide (RTNO), a remote plasma nitrided oxide (RPN), a remote plasma nitridation of N₂O oxide with rapid thermal NO annealing (N₂O + RPN + NO), and a rapid thermal reoxidation of remote plasma nitrided oxide (ReoxRPN) are reported for the first time as a means to extend the reliability scaling limit of SiO ₂/oxynitride-based gate dielectrics. The N₂O + RPN + NO gate dielectric films show superior interface properties, significantly reduced leakage current, and improved reliability compared to other gate dielectrics fabricated by different processes.

Original language	English
Pages (from-to)	G851-G855
Journal	Journal of the Electrochemical Society
Volume	152
Issue number	11
DOIs	https://doi.org/10.1149/1.2051827
State	Published - 2005

Access to Document

10.1149/1.2051827

Cite this

@article{e5a9872a128e46948341e14aa59a9914,

title = "Reliability scaling limit of 14-{\AA} oxynitride gate dielectrics by different processing treatments",

abstract = "Various ultrathin oxynitride gate dielectrics of similar thickness (∼ 1.4 nm) processed by a rapid thermal NO-nitrided oxide (RTNO), a remote plasma nitrided oxide (RPN), a remote plasma nitridation of N2O oxide with rapid thermal NO annealing (N2O + RPN + NO), and a rapid thermal reoxidation of remote plasma nitrided oxide (ReoxRPN) are reported for the first time as a means to extend the reliability scaling limit of SiO 2/oxynitride-based gate dielectrics. The N2O + RPN + NO gate dielectric films show superior interface properties, significantly reduced leakage current, and improved reliability compared to other gate dielectrics fabricated by different processes.",

author = "Pan, \{Tung Ming\} and Liu, \{Chuan Hsi\}",

year = "2005",

doi = "10.1149/1.2051827",

language = "英语",

volume = "152",

pages = "G851--G855",

journal = "Journal of the Electrochemical Society",

issn = "0013-4651",

publisher = "Institute of Physics",

number = "11",

}

TY - JOUR

T1 - Reliability scaling limit of 14-Å oxynitride gate dielectrics by different processing treatments

AU - Pan, Tung Ming

AU - Liu, Chuan Hsi

PY - 2005

Y1 - 2005

N2 - Various ultrathin oxynitride gate dielectrics of similar thickness (∼ 1.4 nm) processed by a rapid thermal NO-nitrided oxide (RTNO), a remote plasma nitrided oxide (RPN), a remote plasma nitridation of N2O oxide with rapid thermal NO annealing (N2O + RPN + NO), and a rapid thermal reoxidation of remote plasma nitrided oxide (ReoxRPN) are reported for the first time as a means to extend the reliability scaling limit of SiO 2/oxynitride-based gate dielectrics. The N2O + RPN + NO gate dielectric films show superior interface properties, significantly reduced leakage current, and improved reliability compared to other gate dielectrics fabricated by different processes.

AB - Various ultrathin oxynitride gate dielectrics of similar thickness (∼ 1.4 nm) processed by a rapid thermal NO-nitrided oxide (RTNO), a remote plasma nitrided oxide (RPN), a remote plasma nitridation of N2O oxide with rapid thermal NO annealing (N2O + RPN + NO), and a rapid thermal reoxidation of remote plasma nitrided oxide (ReoxRPN) are reported for the first time as a means to extend the reliability scaling limit of SiO 2/oxynitride-based gate dielectrics. The N2O + RPN + NO gate dielectric films show superior interface properties, significantly reduced leakage current, and improved reliability compared to other gate dielectrics fabricated by different processes.

UR - https://www.scopus.com/pages/publications/27944502582

U2 - 10.1149/1.2051827

DO - 10.1149/1.2051827

M3 - 文章

AN - SCOPUS:27944502582

SN - 0013-4651

VL - 152

SP - G851-G855

JO - Journal of the Electrochemical Society

JF - Journal of the Electrochemical Society

IS - 11

ER -

Reliability scaling limit of 14-Å oxynitride gate dielectrics by different processing treatments

Abstract

Access to Document

Other files and links

Fingerprint

Cite this