Reprint of: Improvements on thermal stability of graphene and top gate graphene transistors by Ar annealing

Bo Liu; In Shiang Chiu; Chao Sung Lai

doi:10.1016/j.vacuum.2017.04.010

Reprint of: Improvements on thermal stability of graphene and top gate graphene transistors by Ar annealing

Bo Liu, In Shiang Chiu, Chao Sung Lai^*

^*Corresponding author for this work

Department of Electronic Engineering

Research output: Contribution to journal › Journal Article › peer-review

3 Scopus citations

Abstract

Thermal annealing of graphene was studied to improve the thermal stability. During the annealing under an Ar atmosphere with temperature from 100 °C to 600 °C, graphene exhibits partial removal of PMMA residues, low density of defect cracks in SEM images and relatively low I_D/I_G ratios in Raman spectrum probing. For a top-gated graphene transistor with thermal annealing, it performs high carrier mobility up to 3500 cm² V⁻¹ s⁻¹ and slightly asymmetric bipolar behaviours as well as slight Dirac point variation within ±0.2 V.

Original language	English
Pages (from-to)	149-154
Number of pages	6
Journal	Vacuum
Volume	140
DOIs	https://doi.org/10.1016/j.vacuum.2017.04.010
State	Published - 06 2017

Bibliographical note

Publisher Copyright:
© 2016 Elsevier Ltd

Keywords

Graphene
Graphene transistors
High mobility
Low defects
Raman spectrum
Thermal stability

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10.1016/j.vacuum.2017.04.010

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title = "Reprint of: Improvements on thermal stability of graphene and top gate graphene transistors by Ar annealing",

abstract = "Thermal annealing of graphene was studied to improve the thermal stability. During the annealing under an Ar atmosphere with temperature from 100 °C to 600 °C, graphene exhibits partial removal of PMMA residues, low density of defect cracks in SEM images and relatively low ID/IG ratios in Raman spectrum probing. For a top-gated graphene transistor with thermal annealing, it performs high carrier mobility up to 3500 cm2 V−1 s−1 and slightly asymmetric bipolar behaviours as well as slight Dirac point variation within ±0.2 V.",

keywords = "Graphene, Graphene transistors, High mobility, Low defects, Raman spectrum, Thermal stability",

author = "Bo Liu and Chiu, {In Shiang} and Lai, {Chao Sung}",

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year = "2017",

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doi = "10.1016/j.vacuum.2017.04.010",

language = "英语",

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AU - Lai, Chao Sung

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AB - Thermal annealing of graphene was studied to improve the thermal stability. During the annealing under an Ar atmosphere with temperature from 100 °C to 600 °C, graphene exhibits partial removal of PMMA residues, low density of defect cracks in SEM images and relatively low ID/IG ratios in Raman spectrum probing. For a top-gated graphene transistor with thermal annealing, it performs high carrier mobility up to 3500 cm2 V−1 s−1 and slightly asymmetric bipolar behaviours as well as slight Dirac point variation within ±0.2 V.

KW - Graphene

KW - Graphene transistors

KW - High mobility

KW - Low defects

KW - Raman spectrum

KW - Thermal stability

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VL - 140

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JO - Vacuum

JF - Vacuum

ER -

Reprint of: Improvements on thermal stability of graphene and top gate graphene transistors by Ar annealing

Abstract

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Keywords

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