Requirement for accurate interconnect temperature measurement for electromigration test

Yuejin Hou*, Cher Ming Tan

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

1 Scopus citations

Abstract

In this work, we show accurate temperature measurement is important in electromigration (EM) test as it can affect the measured activation energy EA and current density exponent n. The deviation of measured EA and n due to the interconnect temperature variations are derived analytically and illustrated in Cu/low-k interconnects using finite element analysis (FEA) under typical experimental conditions. The derived formulations are verified by our previous experimental works.

Original languageEnglish
Title of host publicationISIC-2009 - 12th International Symposium on Integrated Circuits, Proceedings
Pages522-525
Number of pages4
StatePublished - 2009
Externally publishedYes
Event12th International Symposium on Integrated Circuits, ISIC-2009 - Singapore, Singapore
Duration: 14 12 200916 12 2009

Publication series

NameISIC-2009 - 12th International Symposium on Integrated Circuits, Proceedings

Conference

Conference12th International Symposium on Integrated Circuits, ISIC-2009
Country/TerritorySingapore
CitySingapore
Period14/12/0916/12/09

Keywords

  • Activation energy
  • Current density exponent
  • Electromigration

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