TY - JOUR
T1 - Resistive switching characteristics of Tm 2O 3, Yb 2O 3, and Lu 2O 3-based metal-insulator-metal memory devices
AU - Pan, Tung Ming
AU - Lu, Chih Hung
AU - Mondal, Somnath
AU - Ko, Fu Hsiang
PY - 2012
Y1 - 2012
N2 - In this paper, we investigated the electroforming-free resistive switching (RS) behavior in the Ru/RE 2O 3 /TaN (rareearth, RE, RE = Tm, Yb, and Lu) memory device fabricated with full room temperature process. The conduction mechanism of RE 2O 3 -based memory devices in the low-resistance state is ohmic emission, whereas Tm 2O 3, Yb 2 O 3, and Lu 2 O 3 memory devices in the high-resistance state are space charge limited conduction (SCLC), ohmic behavior, and SCLC, respectively. The Ru/Lu 2O 3 /TaN device showed a high-resistance ratio of ∼10 4 , a high device yield of∼70%, a good data retention as long as 10 5 s measured at 85 °C, and a reliable endurance for up to 100 cycles, suggesting the optimal chemical defects (metallic Lu and nonlattice oxygen ion) in Lu 2O 3 film. All of these results suggest that Ru/Lu 2O 3 /TaN structure memory is a good candidate for future nonvolatile RS memory applications.
AB - In this paper, we investigated the electroforming-free resistive switching (RS) behavior in the Ru/RE 2O 3 /TaN (rareearth, RE, RE = Tm, Yb, and Lu) memory device fabricated with full room temperature process. The conduction mechanism of RE 2O 3 -based memory devices in the low-resistance state is ohmic emission, whereas Tm 2O 3, Yb 2 O 3, and Lu 2 O 3 memory devices in the high-resistance state are space charge limited conduction (SCLC), ohmic behavior, and SCLC, respectively. The Ru/Lu 2O 3 /TaN device showed a high-resistance ratio of ∼10 4 , a high device yield of∼70%, a good data retention as long as 10 5 s measured at 85 °C, and a reliable endurance for up to 100 cycles, suggesting the optimal chemical defects (metallic Lu and nonlattice oxygen ion) in Lu 2O 3 film. All of these results suggest that Ru/Lu 2O 3 /TaN structure memory is a good candidate for future nonvolatile RS memory applications.
KW - Lu O
KW - Tm O
KW - Yb O
KW - rare-earth (RE)
KW - resistive switching (RS)
UR - http://www.scopus.com/inward/record.url?scp=84866064345&partnerID=8YFLogxK
U2 - 10.1109/TNANO.2012.2211893
DO - 10.1109/TNANO.2012.2211893
M3 - 文章
AN - SCOPUS:84866064345
SN - 1536-125X
VL - 11
SP - 1040
EP - 1046
JO - IEEE Transactions on Nanotechnology
JF - IEEE Transactions on Nanotechnology
IS - 5
M1 - 6276260
ER -