Resistive switching characteristics of Tm 2O 3, Yb 2O 3, and Lu 2O 3-based metal-insulator-metal memory devices

Tung Ming Pan; Chih Hung Lu; Somnath Mondal; Fu Hsiang Ko

doi:10.1109/TNANO.2012.2211893

Resistive switching characteristics of Tm ₂O ₃, Yb ₂O ₃, and Lu ₂O ₃-based metal-insulator-metal memory devices

Tung Ming Pan^*
, Chih Hung Lu
, Somnath Mondal
, Fu Hsiang Ko

^*Corresponding author for this work

Department of Electronic Engineering

Chang Gung University
National Yang Ming Chiao Tung University

Research output: Contribution to journal › Journal Article › peer-review

30 Scopus citations

Abstract

In this paper, we investigated the electroforming-free resistive switching (RS) behavior in the Ru/RE ₂O ₃ /TaN (rareearth, RE, RE = Tm, Yb, and Lu) memory device fabricated with full room temperature process. The conduction mechanism of RE ₂O ₃ -based memory devices in the low-resistance state is ohmic emission, whereas Tm ₂O ₃, Yb ₂ O ₃, and Lu ₂ O ₃ memory devices in the high-resistance state are space charge limited conduction (SCLC), ohmic behavior, and SCLC, respectively. The Ru/Lu ₂O ₃ /TaN device showed a high-resistance ratio of ∼10 ⁴ , a high device yield of∼70%, a good data retention as long as 10 ⁵ s measured at 85 °C, and a reliable endurance for up to 100 cycles, suggesting the optimal chemical defects (metallic Lu and nonlattice oxygen ion) in Lu ₂O ₃ film. All of these results suggest that Ru/Lu ₂O ₃ /TaN structure memory is a good candidate for future nonvolatile RS memory applications.

Original language	English
Article number	6276260
Pages (from-to)	1040-1046
Number of pages	7
Journal	IEEE Transactions on Nanotechnology
Volume	11
Issue number	5
DOIs	https://doi.org/10.1109/TNANO.2012.2211893
State	Published - 2012

Keywords

Lu O
Tm O
Yb O
rare-earth (RE)
resistive switching (RS)

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10.1109/TNANO.2012.2211893

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@article{694a8634109442149966879cb15d2e2f,

title = "Resistive switching characteristics of Tm 2O 3, Yb 2O 3, and Lu 2O 3-based metal-insulator-metal memory devices",

abstract = "In this paper, we investigated the electroforming-free resistive switching (RS) behavior in the Ru/RE 2O 3 /TaN (rareearth, RE, RE = Tm, Yb, and Lu) memory device fabricated with full room temperature process. The conduction mechanism of RE 2O 3 -based memory devices in the low-resistance state is ohmic emission, whereas Tm 2O 3, Yb 2 O 3, and Lu 2 O 3 memory devices in the high-resistance state are space charge limited conduction (SCLC), ohmic behavior, and SCLC, respectively. The Ru/Lu 2O 3 /TaN device showed a high-resistance ratio of ∼10 4 , a high device yield of∼70\%, a good data retention as long as 10 5 s measured at 85 °C, and a reliable endurance for up to 100 cycles, suggesting the optimal chemical defects (metallic Lu and nonlattice oxygen ion) in Lu 2O 3 film. All of these results suggest that Ru/Lu 2O 3 /TaN structure memory is a good candidate for future nonvolatile RS memory applications.",

keywords = "Lu O, Tm O, Yb O, rare-earth (RE), resistive switching (RS)",

author = "Pan, \{Tung Ming\} and Lu, \{Chih Hung\} and Somnath Mondal and Ko, \{Fu Hsiang\}",

year = "2012",

doi = "10.1109/TNANO.2012.2211893",

language = "英语",

volume = "11",

pages = "1040--1046",

journal = "IEEE Transactions on Nanotechnology",

issn = "1536-125X",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "5",

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TY - JOUR

T1 - Resistive switching characteristics of Tm 2O 3, Yb 2O 3, and Lu 2O 3-based metal-insulator-metal memory devices

AU - Pan, Tung Ming

AU - Lu, Chih Hung

AU - Mondal, Somnath

AU - Ko, Fu Hsiang

PY - 2012

Y1 - 2012

N2 - In this paper, we investigated the electroforming-free resistive switching (RS) behavior in the Ru/RE 2O 3 /TaN (rareearth, RE, RE = Tm, Yb, and Lu) memory device fabricated with full room temperature process. The conduction mechanism of RE 2O 3 -based memory devices in the low-resistance state is ohmic emission, whereas Tm 2O 3, Yb 2 O 3, and Lu 2 O 3 memory devices in the high-resistance state are space charge limited conduction (SCLC), ohmic behavior, and SCLC, respectively. The Ru/Lu 2O 3 /TaN device showed a high-resistance ratio of ∼10 4 , a high device yield of∼70%, a good data retention as long as 10 5 s measured at 85 °C, and a reliable endurance for up to 100 cycles, suggesting the optimal chemical defects (metallic Lu and nonlattice oxygen ion) in Lu 2O 3 film. All of these results suggest that Ru/Lu 2O 3 /TaN structure memory is a good candidate for future nonvolatile RS memory applications.

AB - In this paper, we investigated the electroforming-free resistive switching (RS) behavior in the Ru/RE 2O 3 /TaN (rareearth, RE, RE = Tm, Yb, and Lu) memory device fabricated with full room temperature process. The conduction mechanism of RE 2O 3 -based memory devices in the low-resistance state is ohmic emission, whereas Tm 2O 3, Yb 2 O 3, and Lu 2 O 3 memory devices in the high-resistance state are space charge limited conduction (SCLC), ohmic behavior, and SCLC, respectively. The Ru/Lu 2O 3 /TaN device showed a high-resistance ratio of ∼10 4 , a high device yield of∼70%, a good data retention as long as 10 5 s measured at 85 °C, and a reliable endurance for up to 100 cycles, suggesting the optimal chemical defects (metallic Lu and nonlattice oxygen ion) in Lu 2O 3 film. All of these results suggest that Ru/Lu 2O 3 /TaN structure memory is a good candidate for future nonvolatile RS memory applications.

KW - Lu O

KW - Tm O

KW - Yb O

KW - rare-earth (RE)

KW - resistive switching (RS)

UR - https://www.scopus.com/pages/publications/84866064345

U2 - 10.1109/TNANO.2012.2211893

DO - 10.1109/TNANO.2012.2211893

M3 - 文章

AN - SCOPUS:84866064345

SN - 1536-125X

VL - 11

SP - 1040

EP - 1046

JO - IEEE Transactions on Nanotechnology

JF - IEEE Transactions on Nanotechnology

IS - 5

M1 - 6276260

ER -

Resistive switching characteristics of Tm ₂O ₃, Yb ₂O ₃, and Lu ₂O ₃-based metal-insulator-metal memory devices

Abstract

Keywords

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