Resistive switching memory and artificial synapse by using Ti/MoS2 based conductive bridging cross-points

Mrinmoy Dutta; Asim Senapati; Sreekanth Ginnaram; Siddheswar Maikap

doi:10.1016/j.vacuum.2020.109326

Resistive switching memory and artificial synapse by using Ti/MoS₂ based conductive bridging cross-points

Mrinmoy Dutta
, Asim Senapati
, Sreekanth Ginnaram
, Siddheswar Maikap^*

^*Corresponding author for this work

Department of Electronic Engineering

Chang Gung University
Chang Gung Memorial Hospital

Research output: Contribution to journal › Journal Article › peer-review

27 Scopus citations

Abstract

The Ti/MoS₂ based 9 × 9 conductive bridge cross-points in Al/Cu/Ti/MoS₂/Pt structure and its suitability in brain-inspired neuromorphic application have been investigated. Repeatable forming-free multilevel switching cycles with the low current compliances (CCs) of 10 μA–300 μA and long program/erase (P/E) endurance of >7 × 10⁸ with low P/E current of 10 μA/100 μA at a high-speed of 100 ns have been obtained than pure MoS₂ based devices. Copper reduction-oxidation (redox) reaction associated resistive switching mechanism through cyclic-voltammetry is also investigated. Conductivity modulated potentiation and depression results as well as LTP/LTD characteristics have been explored. Significantly low energy consumption in between 17 fJ to 398 fJ has been obtained.

Original language	English
Article number	109326
Journal	Vacuum
Volume	176
DOIs	https://doi.org/10.1016/j.vacuum.2020.109326
State	Published - 06 2020

Bibliographical note

Publisher Copyright:
© 2020 Elsevier Ltd

Keywords

Artificial synapse
Conductive bridge
Cross-point
Redox
Resistive switching
Ti/MoS

Access to Document

10.1016/j.vacuum.2020.109326

Cite this

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title = "Resistive switching memory and artificial synapse by using Ti/MoS2 based conductive bridging cross-points",

abstract = "The Ti/MoS2 based 9 {\texttimes} 9 conductive bridge cross-points in Al/Cu/Ti/MoS2/Pt structure and its suitability in brain-inspired neuromorphic application have been investigated. Repeatable forming-free multilevel switching cycles with the low current compliances (CCs) of 10 μA{\textendash}300 μA and long program/erase (P/E) endurance of >7 {\texttimes} 108 with low P/E current of 10 μA/100 μA at a high-speed of 100 ns have been obtained than pure MoS2 based devices. Copper reduction-oxidation (redox) reaction associated resistive switching mechanism through cyclic-voltammetry is also investigated. Conductivity modulated potentiation and depression results as well as LTP/LTD characteristics have been explored. Significantly low energy consumption in between 17 fJ to 398 fJ has been obtained.",

keywords = "Artificial synapse, Conductive bridge, Cross-point, Redox, Resistive switching, Ti/MoS",

author = "Mrinmoy Dutta and Asim Senapati and Sreekanth Ginnaram and Siddheswar Maikap",

note = "Publisher Copyright: {\textcopyright} 2020 Elsevier Ltd",

year = "2020",

month = jun,

doi = "10.1016/j.vacuum.2020.109326",

language = "英语",

volume = "176",

journal = "Vacuum",

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T1 - Resistive switching memory and artificial synapse by using Ti/MoS2 based conductive bridging cross-points

AU - Dutta, Mrinmoy

AU - Senapati, Asim

AU - Ginnaram, Sreekanth

AU - Maikap, Siddheswar

PY - 2020/6

Y1 - 2020/6

N2 - The Ti/MoS2 based 9 × 9 conductive bridge cross-points in Al/Cu/Ti/MoS2/Pt structure and its suitability in brain-inspired neuromorphic application have been investigated. Repeatable forming-free multilevel switching cycles with the low current compliances (CCs) of 10 μA–300 μA and long program/erase (P/E) endurance of >7 × 108 with low P/E current of 10 μA/100 μA at a high-speed of 100 ns have been obtained than pure MoS2 based devices. Copper reduction-oxidation (redox) reaction associated resistive switching mechanism through cyclic-voltammetry is also investigated. Conductivity modulated potentiation and depression results as well as LTP/LTD characteristics have been explored. Significantly low energy consumption in between 17 fJ to 398 fJ has been obtained.

AB - The Ti/MoS2 based 9 × 9 conductive bridge cross-points in Al/Cu/Ti/MoS2/Pt structure and its suitability in brain-inspired neuromorphic application have been investigated. Repeatable forming-free multilevel switching cycles with the low current compliances (CCs) of 10 μA–300 μA and long program/erase (P/E) endurance of >7 × 108 with low P/E current of 10 μA/100 μA at a high-speed of 100 ns have been obtained than pure MoS2 based devices. Copper reduction-oxidation (redox) reaction associated resistive switching mechanism through cyclic-voltammetry is also investigated. Conductivity modulated potentiation and depression results as well as LTP/LTD characteristics have been explored. Significantly low energy consumption in between 17 fJ to 398 fJ has been obtained.

KW - Artificial synapse

KW - Conductive bridge

KW - Cross-point

KW - Redox

KW - Resistive switching

KW - Ti/MoS

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