Retention behavior of graphene oxide resistive switching memory on flexible substrate

Fang Yuan; Yu Ren Ye; Jer Chyi Wang; Zhigang Zhang; Liyang Pan; Jun Xu; Chao Sung Lai

doi:10.1109/INEC.2013.6466025

Retention behavior of graphene oxide resistive switching memory on flexible substrate

Fang Yuan^*, Yu Ren Ye, Jer Chyi Wang, Zhigang Zhang, Liyang Pan, Jun Xu, Chao Sung Lai

^*Corresponding author for this work

Department of Electronic Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

7 Scopus citations

Abstract

This work presents a flexible carbon based memory with the Al/graphene oxide (GO)/ITO structure fabricated at room temperature. The Al/GO/ITO devices show the unipolar resistive switching behavior with the resistance ratio to over 30, and sustain over 250 cycling without any resistance window closure. However, the retention fails due to the resistance increase of low resistance state (LRS). The mechanisms of switching and retention failure are studied.

Original language	English
Title of host publication	Proceedings of the 2013 IEEE 5th International Nanoelectronics Conference, INEC 2013
Pages	288-290
Number of pages	3
DOIs	https://doi.org/10.1109/INEC.2013.6466025
State	Published - 2013
Event	2013 IEEE 5th International Nanoelectronics Conference, INEC 2013 - Singapore, Singapore Duration: 02 01 2013 → 04 01 2013

Publication series

Name	Proceedings - Winter Simulation Conference
ISSN (Print)	0891-7736

Conference

Conference	2013 IEEE 5th International Nanoelectronics Conference, INEC 2013
Country/Territory	Singapore
City	Singapore
Period	02/01/13 → 04/01/13

Keywords

RRAM
graphene oxide
resistive switching
retention
unipolar

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10.1109/INEC.2013.6466025

Cite this

Yuan, F., Ye, Y. R., Wang, J. C., Zhang, Z., Pan, L., Xu, J., & Lai, C. S. (2013). Retention behavior of graphene oxide resistive switching memory on flexible substrate. In Proceedings of the 2013 IEEE 5th International Nanoelectronics Conference, INEC 2013 (pp. 288-290). Article 6466025 (Proceedings - Winter Simulation Conference). https://doi.org/10.1109/INEC.2013.6466025

@inproceedings{2480af3b87af4a828146a5248beecc2d,

title = "Retention behavior of graphene oxide resistive switching memory on flexible substrate",

abstract = "This work presents a flexible carbon based memory with the Al/graphene oxide (GO)/ITO structure fabricated at room temperature. The Al/GO/ITO devices show the unipolar resistive switching behavior with the resistance ratio to over 30, and sustain over 250 cycling without any resistance window closure. However, the retention fails due to the resistance increase of low resistance state (LRS). The mechanisms of switching and retention failure are studied.",

keywords = "RRAM, graphene oxide, resistive switching, retention, unipolar",

author = "Fang Yuan and Ye, {Yu Ren} and Wang, {Jer Chyi} and Zhigang Zhang and Liyang Pan and Jun Xu and Lai, {Chao Sung}",

year = "2013",

doi = "10.1109/INEC.2013.6466025",

language = "英语",

isbn = "9781467348416",

series = "Proceedings - Winter Simulation Conference",

pages = "288--290",

booktitle = "Proceedings of the 2013 IEEE 5th International Nanoelectronics Conference, INEC 2013",

note = "2013 IEEE 5th International Nanoelectronics Conference, INEC 2013 ; Conference date: 02-01-2013 Through 04-01-2013",

}

Yuan, F, Ye, YR, Wang, JC, Zhang, Z, Pan, L, Xu, J & Lai, CS 2013, Retention behavior of graphene oxide resistive switching memory on flexible substrate. in Proceedings of the 2013 IEEE 5th International Nanoelectronics Conference, INEC 2013., 6466025, Proceedings - Winter Simulation Conference, pp. 288-290, 2013 IEEE 5th International Nanoelectronics Conference, INEC 2013, Singapore, Singapore, 02/01/13. https://doi.org/10.1109/INEC.2013.6466025

Retention behavior of graphene oxide resistive switching memory on flexible substrate. / Yuan, Fang; Ye, Yu Ren; Wang, Jer Chyi et al.
Proceedings of the 2013 IEEE 5th International Nanoelectronics Conference, INEC 2013. 2013. p. 288-290 6466025 (Proceedings - Winter Simulation Conference).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Retention behavior of graphene oxide resistive switching memory on flexible substrate

AU - Yuan, Fang

AU - Ye, Yu Ren

AU - Wang, Jer Chyi

AU - Zhang, Zhigang

AU - Pan, Liyang

AU - Xu, Jun

AU - Lai, Chao Sung

PY - 2013

Y1 - 2013

N2 - This work presents a flexible carbon based memory with the Al/graphene oxide (GO)/ITO structure fabricated at room temperature. The Al/GO/ITO devices show the unipolar resistive switching behavior with the resistance ratio to over 30, and sustain over 250 cycling without any resistance window closure. However, the retention fails due to the resistance increase of low resistance state (LRS). The mechanisms of switching and retention failure are studied.

AB - This work presents a flexible carbon based memory with the Al/graphene oxide (GO)/ITO structure fabricated at room temperature. The Al/GO/ITO devices show the unipolar resistive switching behavior with the resistance ratio to over 30, and sustain over 250 cycling without any resistance window closure. However, the retention fails due to the resistance increase of low resistance state (LRS). The mechanisms of switching and retention failure are studied.

KW - RRAM

KW - graphene oxide

KW - resistive switching

KW - retention

KW - unipolar

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U2 - 10.1109/INEC.2013.6466025

DO - 10.1109/INEC.2013.6466025

M3 - 会议稿件

AN - SCOPUS:84874781347

SN - 9781467348416

T3 - Proceedings - Winter Simulation Conference

SP - 288

EP - 290

BT - Proceedings of the 2013 IEEE 5th International Nanoelectronics Conference, INEC 2013

T2 - 2013 IEEE 5th International Nanoelectronics Conference, INEC 2013

Y2 - 2 January 2013 through 4 January 2013

ER -

Retention behavior of graphene oxide resistive switching memory on flexible substrate

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Keywords

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