Retraction to Enhanced resistive switching memory characteristics and mechanism using a Ti nanolayer at the W/TaOx interface

Amit Prakash^*, Siddheswar Maikap, Hsien Chin Chiu, Ta Chang Tien, Chao-Sung Lai

^*Corresponding author for this work

Research output: Contribution to journal › Comment/debate

2 Scopus citations

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@article{1b58cbe2ae9245febe8be558faf1316f,

title = "Retraction to Enhanced resistive switching memory characteristics and mechanism using a Ti nanolayer at the W/TaOx interface",

author = "Amit Prakash and Siddheswar Maikap and Chiu, {Hsien Chin} and Tien, {Ta Chang} and Chao-Sung Lai",

year = "2013",

doi = "10.1186/1556-276X-8-419",

language = "英语",

volume = "8",

journal = "Nanoscale Research Letters",

issn = "1931-7573",

publisher = "Springer New York",

number = "1",

}

TY - JOUR

T1 - Retraction to Enhanced resistive switching memory characteristics and mechanism using a Ti nanolayer at the W/TaOx interface

AU - Prakash, Amit

AU - Maikap, Siddheswar

AU - Chiu, Hsien Chin

AU - Tien, Ta Chang

AU - Lai, Chao-Sung

PY - 2013

Y1 - 2013

UR - http://www.scopus.com/inward/record.url?scp=84887264422&partnerID=8YFLogxK

U2 - 10.1186/1556-276X-8-419

DO - 10.1186/1556-276X-8-419

M3 - 评论/辩论

AN - SCOPUS:84887264422

SN - 1931-7573

VL - 8

JO - Nanoscale Research Letters

JF - Nanoscale Research Letters

IS - 1

M1 - 419

ER -