Review of electromigration modeling of IC interconnects

Jian Guo Ma*, Ming Yao, Cher Ming Tan

*Corresponding author for this work

Research output: Contribution to journalJournal Article peer-review

1 Scopus citations

Abstract

The history of electromigration (EM) modeling of IC interconnects is briefly reviewed. The widely used one-dimension (1-D) EM-induced back flow model is introduced. Based on the conception of atomic flux divergence (AFD), the EM modeling can also be mainly grouped into two approaches. One is the conventional diffusion path approach, which has explained many important phenomena in traditional Al on-chip metallization. However, the microelectronic industry has turned to Cu/low-k interconnects in need of better performances of the shrinking chip, and three-dimensional (3-D) integrated circuit technology is also introduced. In this trend, the driving force approach is developed, which can help to understand many phenomena in narrow interconnection. The finite element modeling (FEM) is used more and more in the driving force formalism.

Original languageEnglish
Pages (from-to)495-504
Number of pages10
JournalDianzi Keji Daxue Xuebao/Journal of the University of Electronic Science and Technology of China
Volume38
Issue number5
DOIs
StatePublished - 09 2009
Externally publishedYes

Keywords

  • Diffusion path approach
  • Driving force approach
  • Electromigration
  • FEM
  • ICs
  • Interconnects
  • Modeling

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