RF Performance of In Situ SiNx Gate Dielectric AlGaN/GaN MISHEMT on 6-in Silicon-on-Insulator Substrate

Hsien Chin Chiu; Hou Yu Wang; Li Yi Peng; Hsiang Chun Wang; Hsuan Ling Kao; Chih Wei Hu; Rong Xuan

doi:10.1109/TED.2017.2743229

RF Performance of In Situ SiN_x Gate Dielectric AlGaN/GaN MISHEMT on 6-in Silicon-on-Insulator Substrate

Hsien Chin Chiu^*, Hou Yu Wang, Li Yi Peng, Hsiang Chun Wang, Hsuan Ling Kao, Chih Wei Hu, Rong Xuan

^*Corresponding author for this work

Department of Electronic Engineering

Research output: Contribution to journal › Journal Article › peer-review

10 Scopus citations

Abstract

A high power-Added efficiency and low dynamic on-resistance (RON) AlGaN/GaN metal-insulator-semiconductorhigh-electronmobility transistor (MISHEMT) with in situ SiNx insulator design was demonstrated on 150-mm silicon-on-insulator (SOI) substrate. Compared to traditional high-resistivity Si substrate, SiN_x/AlGaN/GaN MISHEMT grown on the SOI 5-μm-Thick Si active layer performed better tensile stress relaxation and surface flatness. Based on Hall measurement results, electron mobility and the sheet charge density on SOI substrate were improved simultaneouslyowing to a lower-defectdensitywhichis also proofed by pulse measurement and low-frequency noise measurement. Due to the low-feedback substrate capacitance, the bandwidth, and the linearity were also improved simultaneously by SOI substrate design.

Original language	English
Article number	8023774
Pages (from-to)	4065-4070
Number of pages	6
Journal	IEEE Transactions on Electron Devices
Volume	64
Issue number	10
DOIs	https://doi.org/10.1109/TED.2017.2743229
State	Published - 10 2017

Bibliographical note

Publisher Copyright:
© 1963-2012 IEEE.

Keywords

GaN
in situ SiN
metal-insulator-semiconductor high-electron mobility transistor (MISHEMT)
pulse measurement
silicon-on-insulator (SOI).

Access to Document

10.1109/TED.2017.2743229

Cite this

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title = "RF Performance of In Situ SiNx Gate Dielectric AlGaN/GaN MISHEMT on 6-in Silicon-on-Insulator Substrate",

abstract = "A high power-Added efficiency and low dynamic on-resistance (RON) AlGaN/GaN metal-insulator-semiconductorhigh-electronmobility transistor (MISHEMT) with in situ SiNx insulator design was demonstrated on 150-mm silicon-on-insulator (SOI) substrate. Compared to traditional high-resistivity Si substrate, SiNx/AlGaN/GaN MISHEMT grown on the SOI 5-μm-Thick Si active layer performed better tensile stress relaxation and surface flatness. Based on Hall measurement results, electron mobility and the sheet charge density on SOI substrate were improved simultaneouslyowing to a lower-defectdensitywhichis also proofed by pulse measurement and low-frequency noise measurement. Due to the low-feedback substrate capacitance, the bandwidth, and the linearity were also improved simultaneously by SOI substrate design.",

keywords = "GaN, in situ SiN, metal-insulator-semiconductor high-electron mobility transistor (MISHEMT), pulse measurement, silicon-on-insulator (SOI).",

author = "Chiu, {Hsien Chin} and Wang, {Hou Yu} and Peng, {Li Yi} and Wang, {Hsiang Chun} and Kao, {Hsuan Ling} and Hu, {Chih Wei} and Rong Xuan",

note = "Publisher Copyright: {\textcopyright} 1963-2012 IEEE.",

year = "2017",

month = oct,

doi = "10.1109/TED.2017.2743229",

language = "英语",

volume = "64",

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T1 - RF Performance of In Situ SiNx Gate Dielectric AlGaN/GaN MISHEMT on 6-in Silicon-on-Insulator Substrate

AU - Chiu, Hsien Chin

AU - Wang, Hou Yu

AU - Peng, Li Yi

AU - Wang, Hsiang Chun

AU - Kao, Hsuan Ling

AU - Hu, Chih Wei

AU - Xuan, Rong

PY - 2017/10

Y1 - 2017/10

N2 - A high power-Added efficiency and low dynamic on-resistance (RON) AlGaN/GaN metal-insulator-semiconductorhigh-electronmobility transistor (MISHEMT) with in situ SiNx insulator design was demonstrated on 150-mm silicon-on-insulator (SOI) substrate. Compared to traditional high-resistivity Si substrate, SiNx/AlGaN/GaN MISHEMT grown on the SOI 5-μm-Thick Si active layer performed better tensile stress relaxation and surface flatness. Based on Hall measurement results, electron mobility and the sheet charge density on SOI substrate were improved simultaneouslyowing to a lower-defectdensitywhichis also proofed by pulse measurement and low-frequency noise measurement. Due to the low-feedback substrate capacitance, the bandwidth, and the linearity were also improved simultaneously by SOI substrate design.

AB - A high power-Added efficiency and low dynamic on-resistance (RON) AlGaN/GaN metal-insulator-semiconductorhigh-electronmobility transistor (MISHEMT) with in situ SiNx insulator design was demonstrated on 150-mm silicon-on-insulator (SOI) substrate. Compared to traditional high-resistivity Si substrate, SiNx/AlGaN/GaN MISHEMT grown on the SOI 5-μm-Thick Si active layer performed better tensile stress relaxation and surface flatness. Based on Hall measurement results, electron mobility and the sheet charge density on SOI substrate were improved simultaneouslyowing to a lower-defectdensitywhichis also proofed by pulse measurement and low-frequency noise measurement. Due to the low-feedback substrate capacitance, the bandwidth, and the linearity were also improved simultaneously by SOI substrate design.

KW - GaN

KW - in situ SiN

KW - metal-insulator-semiconductor high-electron mobility transistor (MISHEMT)

KW - pulse measurement

KW - silicon-on-insulator (SOI).

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