Abstract
A very high density of 35 fF/μm 2 is measured in a radio frequency (RF) metal-insulator-metal (MIM) capacitor using high-K (κ = 169} SrTiO 3 fabricated by very large scale integration (VLSI) back-end integration. A very small capacitance reduction of 4.1% from 100 kHz to 10 GHz, low leakage current of 1 × 70 -7 A/cm 2 at 1 V are simultaneously measured. The small voltage dependence of a capacitance AC/C of 637 ppm is also obtained at 2 GHz, which ensures this MIM capacitor useful for high precision circuits operated at a RF regime.
Original language | English |
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Article number | 1683803 |
Pages (from-to) | 493-495 |
Number of pages | 3 |
Journal | IEEE Microwave and Wireless Components Letters |
Volume | 16 |
Issue number | 9 |
DOIs | |
State | Published - 09 2006 |
Keywords
- Capacitor
- International Technology Roadmap for Semiconductors (ITRS)
- Metal-insulator-metal (MIM)
- Radio frequency integrated circuit (RF IC)
- SrTiO